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Akademisyen

ALİEKBER AKTAĞ

PROFESÖR

BOLU ABANT İZZET BAYSAL ÜNİVERSİTESİ FEN-EDEBİYAT FAKÜLTESİ FİZİK BÖLÜMÜ

  • Ana Dal Fen Bilimleri ve Matematik Temel Alanı
  • Yan Dal Fizik

Kayıtlı çıktılara kısa bakış — ayrıntılar aşağıda.

  • Makale 29
  • Proje 0
  • Kitap 0
  • Bildiri 44
  • Patent 0
  • Sanatsal 0
Scopus (SJR) Q1 6 Q2 10 Q3 4 Q4 3
WoS (JCR) Q1 4 Q2 10 Q3 6 Q4 3
TR Index 5 makale

Alan+yıl+tür normalize OpenAlex yüzdelik — Clarivate ESI / SciVal değildir.

Üst %1 makale 0
Üst %10 makale 4
Ort. yüzdelik 65.8%
Üst %1 payı 0.0%
Üst %10 payı 14.3%

Makaleler

YÖKSİS ve OpenAlex kaynak ayrımıyla makaleler; quartile ve TR Index ile daraltabilirsiniz.

Dizin filtreleri

Toplam 29 yayın

Makale listesi

  1. 2025 The SPICE Modeling of a Radiation Sensor Based on a MOSFET with a Dielectric HfO2/SiO2 Double-Layer Sensors DOI 10.3390/s25020546 YÖKSİS SJR Q1 JCR Q2 OpenAlex 78.6%
  2. 2022 Investigation of parameters of new MAPD-3NM silicon photomultipliers Journal of Instrumentation DOI 10.1088/1748-0221/17/01/C01001 YÖKSİS OpenAlex üst %10 OpenAlex 96.9%
  3. 2022 Optical-electrical characteristics of Al/Gd2O3/(CZ-pSi)/Al diodes under gamma ray irradiation Radiation Effects and Defects in Solids DOI 10.1080/10420150.2022.2077204 YÖKSİS SJR Q3 JCR Q4 OpenAlex 2.7%
  4. 2020 Determination of frequency and voltage dependence of electrical properties of Al/(Er2O3/SiO2/n-Si)/Al MOS capacitor JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS DOI 10.1007/s10854-020-03438-z YÖKSİS SJR Q2 JCR Q3 OpenAlex 85.0%
  5. 2019 Electrical Parameters of the Erbium Oxide MOS Capacitor for Different Frequencies Celal Bayar Üniversitesi Fen Bilimleri Dergisi DOI 10.18466/cbayarfbe.460022 YÖKSİS TR Index OpenAlex 69.8%
  6. 2019 Fabrication and characterization of Si-PIN photodiodes TURKISH JOURNAL OF PHYSICS DOI 10.3906/fiz-1905-16 YÖKSİS TR Index SJR Q4 JCR Q3 OpenAlex 60.6%
  7. 2019 NÜRDAM Tarafından Üretilen Fotovoltaik Modüllerin Tek ve Çift Diyot Eşdeğer Devre Modellerinin İncelenmesi. Academic Perspective Procedia DOI 10.33793/acperpro.02.03.121 YÖKSİS OpenAlex 9.4%
  8. 2017 Yttrium oxide nanostructured thin films deposited by radio frequency sputtering: the annealing optimizations and correlations between structural, morphological, optical and electrical properties Journal of Materials Science: Materials in Electronics DOI 10.1007/s10854-017-7241-7 YÖKSİS SJR Q2 JCR Q2 OpenAlex 70.1%
  9. 2016 Evaluation of Radiation Sensor Aspects of MOS Capacitors under Zero Gate Bias IEEE Transactions on Nuclear Science DOI 10.1109/TNS.2016.2524625 YÖKSİS SJR Q2 JCR Q2 OpenAlex 87.8%
  10. 2015 Effects of post deposition annealing interface states and series resistance on electrical characteristics of HfO2 MOS capacitors Journal of Materials Science: Materials in Electronics DOI 10.1007/s10854-015-3492-3 YÖKSİS SJR Q2 JCR Q2 OpenAlex üst %10 OpenAlex 91.2%
  11. 2015 Effects of packing materials on the sensitivity of RadFET with HfO2 gate dielectric for electron and photon sources Radiation Effects and Defects in Solids DOI 10.1080/10420150.2015.1118689 YÖKSİS SJR Q3 JCR Q4 OpenAlex 73.8%
  12. 2015 Characterization of interface defects in BiFeO3 metal oxide semiconductor capacitors deposited by radio frequency magnetron sputtering Journal of Materials Science: Materials in Electronics DOI 10.1007/s10854-015-3174-1 YÖKSİS SJR Q2 JCR Q2 OpenAlex 56.8%
  13. 2015 Samarium oxide thin films deposited by reactive sputtering Effects of sputtering power and substrate temperature on microstructure morphology and electrical properties Materials Science in Semiconductor Processing DOI 10.1016/j.mssp.2015.01.035 YÖKSİS SJR Q2 JCR Q1 OpenAlex 89.8%
  14. 2015 Structural and electrical characterizations of BiFeO3 capacitors deposited by sol gel dip coating technique Thin Solid Films DOI 10.1016/j.tsf.2015.07.053 YÖKSİS SJR Q1 JCR Q2 OpenAlex 60.6%
  15. 2014 Frequency dependent electrical characteristics of BiFeO3 MOS capacitors Journal of Alloys and Compounds DOI 10.1016/j.jallcom.2013.08.204 YÖKSİS SJR Q1 JCR Q1 OpenAlex 85.6%
  16. 2014 Effects of gamma ray irradiation on interface states and series resistance characteristics of BiFeO3 MOS capacitors Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms DOI 10.1016/j.nimb.2013.11.006 YÖKSİS SJR Q2 JCR Q2 OpenAlex 76.0%
  17. 2012 A Suitable Model to Estimate Global Solar Radiation in Black Sea Shoreline Countries Energy Sources, Part A: Recovery, Utilization, and Environmental Effects DOI 10.1080/15567036.2011.649339 YÖKSİS SJR Q2 JCR Q4 OpenAlex 10.2%
  18. 2012 Surface morphology and depth profile study of Cd1 xZnxTe alloy nanostructures Journal of Alloys and Compounds DOI 10.1016/j.jallcom.2012.08.028 YÖKSİS SJR Q1 JCR Q1 OpenAlex 88.3%
  19. 2010 Ge nanocrystals embedded in SiO2 in MOS based radiation sensors Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms DOI 10.1016/j.nimb.2010.09.007 YÖKSİS SJR Q1 JCR Q2 OpenAlex 64.3%
  20. 2010 Stochastic Analysis of Two atoms Two Fields Quantum Entanglement ICMS: INTERNATIONAL CONFERENCE ON MATHEMATICAL SCIENCE DOI 10.1063/1.3525126 YÖKSİS OpenAlex 9.2%

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