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akaturk Akademik ölçüm

Akademisyen profili · PROFESÖR

AYŞEGÜL KAHRAMAN

BURSA ULUDAĞ ÜNİVERSİTESİ

  • Ana Dal Fen Bilimleri ve Matematik Temel Alanı
  • Yan Dal Fizik
  • FEN-EDEBİYAT FAKÜLTESİ
  • FİZİK BÖLÜMÜ
Makale YÖKSİS 42
Proje 1
Kitap 0
Bildiri 40
Patent 1
Sanatsal 1
Scopus (SJR)
Q1 9 Q2 18 Q3 5 Q4 2
WoS (JCR)
Q1 9 Q2 13 Q3 5 Q4 5
TR Index 1 makale

Scopus (SJR)

WoS (JCR)

TR Index

1 makale

Toplam 42 yayın

Makaleler

  1. 2025 The SPICE Modeling of a Radiation Sensor Based on a MOSFET with a Dielectric HfO2/SiO2 Double-Layer Sensors DOI 10.3390/s25020546
  2. 2025 High-Speed Ultraviolet Photodetector Based on p-GaN Gate HEMT for Flame Monitoring IEEE Transactions on Electron Devices DOI 10.1109/TED.2025.3539636
  3. 2025 Proposal of dual-gate oxide layered with HfO2: Comparative results with SiO2-RadFET Radiation Physics and Chemistry DOI 10.1016/j.radphyschem.2025.112691
  4. 2022 Effect of high-radiation-dose-induced structural modifications of HfSiO4/n-Si on electrical characteristics Elsevier BV DOI 10.1016/j.radphyschem.2022.110138
  5. 2022 Investigation of parameters of new MAPD-3NM silicon photomultipliers Journal of Instrumentation DOI 10.1088/1748-0221/17/01/C01001
  6. 2022 Post-deposition annealing effect on the structural and electrical properties of ytterbium oxide as an alternative gate dielectric Materials Chemistry and Physics DOI 10.1016/j.matchemphys.2022.126875
  7. 2021 The relationship between structural and electrical properties of the post-deposition annealed Er2O3/n-Si hetero-structures Materials Science in Semiconductor Processing DOI 10.1016/j.mssp.2021.105819
  8. 2021 Effects of the oxide/interface traps on the electrical characteristics in Al/Yb2O3/SiO2/n-Si/Al MOS capacitors Journal of Materials Science: Materials in Electronics DOI 10.1007/s10854-021-05588-0
  9. 2021 Effect of oxide and interface traps on electrical characteristics of post-deposition annealed HfSiO4/n-Si structures Semiconductor Science and Technology DOI 10.1088/1361-6641/abe31b
  10. 2021 Dose responses of the SiO2 used in radiation sensors in field effect transistor form Journal of Bionic Memory DOI http://www.jbionicmemory.com/index.php/jbm/issue/archive
  11. 2020 Influence of frequency and gamma irradiation on the electrical characteristics of Er2O3, Gd2O3, Yb2O3, and HfO2 MOS-based devices Journal of Materials Science DOI 10.1007/s10853-020-04531-8
  12. 2020 Impact and origin of the oxide-interface traps in Al/Yb2O3/n-Si/Al on the electrical characteristics Journal of Alloys and Compounds DOI 10.1016/j.jallcom.2020.154171
  13. 2020 The effect and nature of the radiation induced oxide-interface traps on the performance of the Yb2O3 MOS device Radiation Physics and Chemistry DOI 10.1016/j.radphyschem.2020.109135
  14. 2019 Electrical Parameters of the Erbium Oxide MOS Capacitor for Different Frequencies Celal Bayar Üniversitesi Fen Bilimleri Dergisi DOI 10.18466/cbayarfbe.460022
  15. 2019 EVALUATION OF THE RadFET RADIATION SENSOR PERFORMANCE IN 18 MV-EXTERNAL BEAM Uludağ University Journal of The Faculty of Engineering DOI 10.17482/uumfd.558166
  16. 2018 A comprehensive study on usage of Gd2O3 dielectric in MOS based radiation sensors considering frequency dependent radiation response Radiation Physics and Chemistry DOI 10.1016/j.radphyschem.2018.07.017
  17. 2018 Impact of interfacial layer using ultra-thin SiO2 on electrical and structural characteristics of Gd2O3 MOS capacitor Journal of Materials Science: Materials in Electronics DOI 10.1007/s10854-018-9847-9
  18. 2018 Understanding of post deposition annealing and substrate temperature effects on structural and electrical properties of Gd2O3 MOS capacitor Journal of Materials Science: Materials in Electronics DOI 10.1007/s10854-018-8804-y
  19. 2018 Effects of interface states and series resistance on the electrical characteristic of Sc2O3 MOS capacitor Sakarya University Journal of Science DOI 10.16984/saufenbilder.327593
  20. 2017 Investigation of RadFET response to X-ray and electron beams Applied Radiation and Isotopes DOI 10.1016/j.apradiso.2017.06.004

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