Advancements in Photolithography Techniques

Extreme ultraviolet (EUV, λ=13 nm) lithography is considered to be the most likely technology to follow ultraviolet (optical) lithography. One of the challenging aspects is the development of suitable resist materials and processes. This development requires the ability to produce high-resolution patterns. Until now,…

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• ERCÜMENT MURAT SÖZER

X-ray interference lithography (XIL) was employed in combination with electrodeposition to fabricate arrays of nanoscale nickel dots which are uniform over 40μm and have periods down to 71nm. Using extreme-ultraviolet light, XIL has the potential to produce magnetic dot arrays over large areas with periods well below…

In this paper, we present a new layout level automation tool for analog CMOS circuits, namely, analog layout generator (ALG). ALG is capable of generating individual or matched components as well as placement and routing. ALG takes performance considerations into account, optimizing the layout in each step. A distingu…

• GÜNHAN DÜNDAR

Development of photoresist materials for the extreme ultraviolet lithography (EUVL) technology is one of the major challenges facing the researchers in this area. In addition to answering the well known challenges presented by the EUV radiation like the high absorption coefficients, the candidate materials should have…

Scanning probe lithography (SPL) is capable of sub-30-nm-patterning resolution and nanometer-scale alignment registration, suggesting it might provide a solution to the semiconductor industry’s lithography challenges. However, SPL throughput is significantly lower than conventional lithography techniques. Low throughp…

Extreme ultraviolet lithography (EUVL) is a next generation lithography technology aimed at critical dimension of 70 nm and below. It is important to characterize the imaging properties of the resist in this wavelength range. In this article we present results of EUVL and x-ray lithography studies of the dissolution p…

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Limited beam spot size is a major limitation of interference lithography. This limits the area of patterning and reduces the pattern homogeneity. We describe a scanning exposure technique to circumvent this problem. We show the generation of uniform and seamless gratings with half-pitches down to 35 nm over an area of…

Interference lithography (IL) [Yen et al., Appl. Opt. 31, 2972 (1992)] based on reflective optics, and utilizing extreme ultraviolet (EUV) light from an electron storage ring, can be used to pattern structures with periods below 70 nm [Solak et al., Appl. Phys. Lett. 75, 2328 (1999); Ali et al., Microelectron. Eng. 65…

Extreme ultraviolet lithography (EUVL) is the preferred solution for the 32nm node. This paper reports on EUV resist screening results by EUV Interference Lithography, targeting at 32nm half pitch resolution. Progress in resist resolution, sensitivity and LER has been made. Champion results for chemically amplified re…

Permeability characterization of a fabric preform is a key factor that affects the accuracy of process modeling of vacuum infusion. There are various flow types and boundary conditions (such as one-dimensional or radial flow under constant injection pressure or constant injection flow rate during unsaturated or satura…

• ERCÜMENT MURAT SÖZER