Ion-surface interactions and analysis

This tutorial review will introduce and explore the fundamental aspects of nanopore (bio)sensing, fabrication, modification, and the emerging technologies and applications that both intrigue and inspire those working in and around the field. Although nanopores can be classified into two categories, solid-state and bio…

• FATMA DOĞAN GÜZEL

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• OSMAN UĞUR SEZERMAN

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Femtosecond x-ray laser pulses are used to probe the carbon monoxide (CO) oxidation reaction on ruthenium (Ru) initiated by an optical laser pulse. On a time scale of a few hundred femtoseconds, the optical laser pulse excites motions of CO and oxygen (O) on the surface, allowing the reactants to collide, and, with a…

• SARP KAYA

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• MEHMET LÜTFİ YOLA

Doping of graphene via low energy ion implantation could open possibilities for fabrication of nanometer-scale patterned graphene-based devices as well as for graphene functionalization compatible with large-scale integrated semiconductor technology. Using advanced electron microscopy/spectroscopy methods, we show for…

• RECEP ZAN

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• AHMET EMİN EROĞLU
• EZEL BOYACI

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• AYTEN ÖZTÜRK

Current approaches to mass spectrometry (MS) require ionization of the analytes of interest. For high-mass species, the resulting charge state distribution can be complex and difficult to interpret correctly. Here, using a setup comprising both conventional time-of-flight MS (TOF-MS) and nano-electromechanical systems…

• MEHMET SELİM HANAY

We use ultrafast electron crystallography to study structural changes induced in graphite by a femtosecond laser pulse. At moderate fluences of < or =21 mJ/cm2, lattice vibrations are observed to thermalize on a time scale of approximately 8 ps. At higher fluences approaching the damage threshold, lattice vibration am…

• SAVAŞ BERBER

Thermally grown SiO 2 layers on Si (100) substrate have been subjected to different external voltage bias during XPS analysis to induce changes in the measured binding energy difference between Si 4+ and Si 0 in Si2p and Si KLL regions. The Si2p binding energy difference increases from 3.2 to 4.8 for samples containin…

• ŞEFİK SÜZER

Thermally grown SiO 2 layers on Si (100) substrate have been subjected to different external voltage bias during XPS analysis to induce changes in the measured binding energy difference between Si 4+ and Si 0 in Si2p and Si KLL regions. The Si2p binding energy difference increases from 3.2 to 4.8 for samples containin…

• BURAK ÜLGÜT