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Academician

FULYA ESRA CİMİLLİ ÇATIR

DOKTOR ÖĞRETİM ÜYESİ (Unvan:Doçent)

ERZİNCAN BİNALİ YILDIRIM ÜNİVERSİTESİ MESLEK YÜKSEKOKULU ELEKTRONİK VE OTOMASYON BÖLÜMÜ

  • Ana Dal Fen Bilimleri ve Matematik Temel Alanı
  • Yan Dal Fizik

A quick look at recorded outputs — details below.

  • Articles 15
  • Projects 0
  • Books 0
  • Proceedings 18
  • Patents 0
  • Artistic 0
Scopus (SJR) Q1 4 Q2 8 Q3 0 Q4 2
WoS (JCR) Q1 1 Q2 3 Q3 7 Q4 0
TR Index 2 articles

Field+year+type normalized OpenAlex percentiles — not Clarivate ESI / SciVal.

Top 1% articles 0
Top 10% articles 1
Avg percentile 68.0%
Top 1% share 0.0%
Top 10% share 6.2%

Articles

Articles with YÖKSİS and OpenAlex source split; narrow by quartile or TR Index.

Index filters

15 publications total

Scopus (SJR)
Q1 4 Q2 8 Q3 0 Q4 2
WoS (JCR)
Q1 1 Q2 3 Q3 7 Q4 0
TR Index
2 articles

Article list

  1. 2025 Experimental Investigation of Metamaterial-Inspired Periodic Foundation Systems with Embedded Piezoelectric Layers for Seismic Vibration Attenuation Buildings DOI 10.3390/buildings15244399 YÖKSİS SJR Q1 JCR Q2 OpenAlex 57.2%
  2. 2025 CdS Thin Film Characterization and Current Conduction Mechanisms in Pt/CdS/n-InP Heterojunction Diode PHYSICS OF THE SOLID STATE DOI 10.1134/S1063783424601577 YÖKSİS SJR Q4 JCR Q3 OpenAlex 73.0%
  3. 2023 Electronic Properties of FLG/InP Schottky Contacts European Journal of Science and Technology DOI 10.31590/ejosat.1265636 YÖKSİS TR Index OpenAlex 53.8%
  4. 2021 Annealing effect on I-V and C-V characteristics of Al/n-InP Schottky diodes at low temperatures Materials Today: Proceedings DOI 10.1016/j.matpr.2021.03.275 YÖKSİS SJR Q2 OpenAlex 65.3%
  5. 2021 Properties of a facile growth of spray pyrolysis-based rGO films and device performance for Au/rGO/n-InP Schottky diodes JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS DOI 10.1007/s10854-020-04843-0 YÖKSİS SJR Q2 JCR Q2 OpenAlex 72.2%
  6. 2020 The Structural, Optical, and Electrical Characterization of Ti/n-InP Schottky Diodes with Graphene Oxide Interlayer Deposited by Spray Pyrolysis Method PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE DOI 10.1002/pssa.202000125 YÖKSİS SJR Q2 JCR Q3 OpenAlex 51.7%
  7. 2020 Fabrication and characterization of Au/n-type InP Schottky barrier diode with monolayer graphene interlayer SEMICONDUCTOR SCIENCE AND TECHNOLOGY DOI 10.1088/1361-6641/ab6bb4 YÖKSİS SJR Q1 JCR Q3 OpenAlex 62.8%
  8. 2020 Grafen oksitin modifiye Hummers yöntemi ile sentezi ve film olarak Al/GO/n-InP diyot performansına etkileri Gümüşhane Üniversitesi Fen Bilimleri Enstitüsü Dergisi DOI 10.17714/gumusfenbil.770061 YÖKSİS TR Index SJR Q4 OpenAlex 45.5%
  9. 2018 Cu/n-InP/In Schottky Diyotların Sıcaklığa Bağlı Akım-Voltaj ve Kapasite-Voltaj Ölçümlerinden Elde Edilen Karakteristik Parametrelerinin İncelenmesi Erzincan Üniversitesi Fen Bilimleri Enstitüsü Dergisi DOI 10.18185/erzifbed.376279 YÖKSİS OpenAlex 49.4%
  10. 2021 Annealing effect on I-V and C-V characteristics of Al/n-InP Schottky diodes at low temperatures Materials Today: Proceedings DOI 10.1016/j.matpr.2021.03.275 YÖKSİS SJR Q2 OpenAlex 65.3%
  11. 2010 The effect of hydrostatic pressure on the electrical characterization of Au/n-InP Schottky diodes SUPERLATTICES AND MICROSTRUCTURES DOI 10.1016/j.spmi.2010.02.003 YÖKSİS SJR Q1 JCR Q3 OpenAlex 79.4%
  12. 2009 Temperature-dependent current-voltage and capacitance-voltage characteristics of the Ag/n-InP/In Schottky diodes JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS DOI 10.1007/s10854-008-9635-z YÖKSİS SJR Q2 JCR Q2 OpenAlex 77.2%
  13. 2009 Temperature-dependent current-voltage characteristics of the Au/n-InP diodes with inhomogeneous Schottky barrier height PHYSICA B-CONDENSED MATTER DOI 10.1016/j.physb.2009.01.018 YÖKSİS SJR Q2 JCR Q3 OpenAlex top 10% OpenAlex 90.0%
  14. 2008 γ-Irradiation-induced changes at the electrical characteristics of Sn/p-Si Schottky contacts VACUUM DOI 10.1016/j.vacuum.2007.11.006 YÖKSİS SJR Q2 JCR Q3 OpenAlex 71.1%
  15. 2007 Determination of the lateral barrier height of inhomogeneous Au/n-type InP/In Schottky barrier diodes SEMICONDUCTOR SCIENCE AND TECHNOLOGY DOI 10.1088/0268-1242/22/8/003 YÖKSİS SJR Q1 JCR Q1 OpenAlex 89.4%
  16. 2004 Experimental determination of the laterally homogeneous barrier height of Au/n-Si Schottky barrier diodes PHYSICA B-CONDENSED MATTER DOI 10.1016/j.physb.2004.01.002 YÖKSİS SJR Q2 JCR Q3 OpenAlex 84.1%

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