Academician
BERK MORKOÇ
ARAŞTIRMA GÖREVLİSİ
BURSA TEKNİK ÜNİVERSİTESİ MÜHENDİSLİK VE DOĞA BİLİMLERİ FAKÜLTESİ FİZİK BÖLÜMÜ
- Ana Dal Fen Bilimleri ve Matematik Temel Alanı
- Yan Dal Fizik
A quick look at recorded outputs — details below.
- Articles 7
- Projects 0
- Books 0
- Proceedings 1
- Patents 0
- Artistic 0
Scopus (SJR)
Q1
4
Q2
4
Q3
0
Q4
0
WoS (JCR)
Q1
2
Q2
6
Q3
0
Q4
0
TR Index
3
articles
Field+year+type normalized OpenAlex percentiles — not Clarivate ESI / SciVal.
Top 1% articles
0
Top 10% articles
0
Avg percentile
51.6%
Top 1% share
0.0%
Top 10% share
0.0%
Articles
Articles with YÖKSİS and OpenAlex source split; narrow by quartile or TR Index.
Article list
- 2025 InChaP: A simple software for computation of charged particle interaction parameters YÖKSİS SJR Q2 JCR Q1 OpenAlex 57.0%
- 2022 Post-deposition annealing effect on the structural and electrical properties of ytterbium oxide as an alternative gate dielectric YÖKSİS SJR Q1 JCR Q2 OpenAlex 59.3%
- 2021 Effects of the oxide/interface traps on the electrical characteristics in Al/Yb2O3/SiO2/n-Si/Al MOS capacitors YÖKSİS SJR Q2 JCR Q2 OpenAlex 66.5%
- 2021 The relationship between structural and electrical properties of the post-deposition annealed Er2O3/n-Si hetero-structures YÖKSİS SJR Q1 JCR Q2 OpenAlex 52.2%
- 2021 Dose responses of the SiO2 used in radiation sensors in field effect transistor form YÖKSİS OpenAlex 44.1%
- 2019 Electrical Parameters of the Erbium Oxide MOS Capacitor for Different Frequencies YÖKSİS TR Index OpenAlex 69.8%
- 2019 Evaluatıon of THE RadFet radıatıon sensor Performance ın 18 mv-external beam YÖKSİS TR Index OpenAlex 12.4%
- 2025 InChaP: A simple software for computation of charged particle interaction parameters YÖKSİS SJR Q2 JCR Q1 OpenAlex 56.6%
- 2022 Post-deposition annealing effect on the structural and electrical properties of ytterbium oxide as an alternative gate dielectric YÖKSİS SJR Q1 JCR Q2 OpenAlex 59.3%
- 2021 The relationship between structural and electrical properties of the post-deposition annealed Er2O3/n-Si hetero-structures YÖKSİS SJR Q1 JCR Q2 OpenAlex 52.2%
- 2021 Effects of the oxide/interface traps on the electrical characteristics in Al/Yb2O3/SiO2/n-Si/Al MOS capacitors YÖKSİS SJR Q2 JCR Q2 OpenAlex 66.5%
- 2021 Dose responses of the SiO2 used in radiation sensors in field effect transistor form YÖKSİS OpenAlex 44.0%
- 2019 18 MV’luk Harici Işınımın Kullanıldığı Radyasyon Terapisinde RadFET Radyasyon Sensörleri YÖKSİS OpenAlex 12.4%
- 2019 Electrical Parameters of the Erbium Oxide MOS Capacitor for Different Frequencies YÖKSİS TR Index OpenAlex 69.8%