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Akademisyen

BERK MORKOÇ

ARAŞTIRMA GÖREVLİSİ

BURSA TEKNİK ÜNİVERSİTESİ MÜHENDİSLİK VE DOĞA BİLİMLERİ FAKÜLTESİ FİZİK BÖLÜMÜ

  • Ana Dal Fen Bilimleri ve Matematik Temel Alanı
  • Yan Dal Fizik

Kayıtlı çıktılara kısa bakış — ayrıntılar aşağıda.

  • Makale 14
  • Proje 0
  • Kitap 0
  • Bildiri 1
  • Patent 0
  • Sanatsal 0
Scopus (SJR) Q1 4 Q2 4 Q3 0 Q4 0
WoS (JCR) Q1 2 Q2 6 Q3 0 Q4 0
TR Index 3 makale

Alan+yıl+tür normalize OpenAlex yüzdelik — Clarivate ESI / SciVal değildir.

Üst %1 makale 0
Üst %10 makale 0
Ort. yüzdelik 51.6%
Üst %1 payı 0.0%
Üst %10 payı 0.0%

Makaleler

YÖKSİS ve OpenAlex kaynak ayrımıyla makaleler; quartile ve TR Index ile daraltabilirsiniz.

Dizin filtreleri

Toplam 14 yayın

Scopus (SJR)
Q1 4 Q2 4 Q3 0 Q4 0
WoS (JCR)
Q1 2 Q2 6 Q3 0 Q4 0
TR Index

Makale listesi

  1. 2025 InChaP: A simple software for computation of charged particle interaction parameters Nuclear Engineering and Technology DOI 10.1016/j.net.2025.103789 YÖKSİS SJR Q2 JCR Q1 OpenAlex 57.0%
  2. 2022 Post-deposition annealing effect on the structural and electrical properties of ytterbium oxide as an alternative gate dielectric Materials Chemistry and Physics DOI 10.1016/j.matchemphys.2022.126875 YÖKSİS SJR Q1 JCR Q2 OpenAlex 59.3%
  3. 2021 Effects of the oxide/interface traps on the electrical characteristics in Al/Yb2O3/SiO2/n-Si/Al MOS capacitors Journal of Materials Science: Materials in Electronics DOI 10.1007/s10854-021-05588-0 YÖKSİS SJR Q2 JCR Q2 OpenAlex 66.5%
  4. 2021 The relationship between structural and electrical properties of the post-deposition annealed Er2O3/n-Si hetero-structures Materials Science in Semiconductor Processing DOI 10.1016/j.mssp.2021.105819 YÖKSİS SJR Q1 JCR Q2 OpenAlex 52.2%
  5. 2021 Dose responses of the SiO2 used in radiation sensors in field effect transistor form Journal of Bionic Memory DOI 10.53545/jbm.2021175569 YÖKSİS OpenAlex 44.1%
  6. 2019 Electrical Parameters of the Erbium Oxide MOS Capacitor for Different Frequencies Celal Bayar Üniversitesi Fen Bilimleri Dergisi DOI 10.18466/cbayarfbe.460022 YÖKSİS TR Index OpenAlex 69.8%
  7. 2019 Evaluatıon of THE RadFet radıatıon sensor Performance ın 18 mv-external beam Uludağ University Journal of The Faculty of Engineering DOI 10.17482/uumfd.558166 YÖKSİS TR Index OpenAlex 12.4%
  8. 2025 InChaP: A simple software for computation of charged particle interaction parameters Nuclear Engineering and Technology DOI 10.1016/j.net.2025.103789 YÖKSİS SJR Q2 JCR Q1 OpenAlex 56.6%
  9. 2022 Post-deposition annealing effect on the structural and electrical properties of ytterbium oxide as an alternative gate dielectric Materials Chemistry and Physics DOI 10.1016/j.matchemphys.2022.126875 YÖKSİS SJR Q1 JCR Q2 OpenAlex 59.3%
  10. 2021 The relationship between structural and electrical properties of the post-deposition annealed Er2O3/n-Si hetero-structures Materials Science in Semiconductor Processing DOI 10.1016/j.mssp.2021.105819 YÖKSİS SJR Q1 JCR Q2 OpenAlex 52.2%
  11. 2021 Effects of the oxide/interface traps on the electrical characteristics in Al/Yb2O3/SiO2/n-Si/Al MOS capacitors Journal of Materials Science: Materials in Electronics DOI 10.1007/s10854-021-05588-0 YÖKSİS SJR Q2 JCR Q2 OpenAlex 66.5%
  12. 2021 Dose responses of the SiO2 used in radiation sensors in field effect transistor form Journal of Bionic Memory DOI 10.53545/jbm.2021175569 YÖKSİS OpenAlex 44.0%
  13. 2019 18 MV’luk Harici Işınımın Kullanıldığı Radyasyon Terapisinde RadFET Radyasyon Sensörleri Uludağ University Journal of The Faculty of Engineering DOI 10.17482/uumfd.558166 YÖKSİS OpenAlex 12.4%
  14. 2019 Electrical Parameters of the Erbium Oxide MOS Capacitor for Different Frequencies Celal Bayar Üniversitesi Fen Bilimleri Dergisi DOI 10.18466/cbayarfbe.460022 YÖKSİS TR Index OpenAlex 69.8%

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