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Academician

FATİH AKYOL

Doçent

Yıldız Teknik Üniversitesi Kimya-Metalurji Fakültesi Metalurji Ve Malzeme Mühendisliği Bölümü

Research topics OpenAlex
  1. Ana Dal Mühendislik Temel Alanı
  2. Yan Dal Elektrik-Elektronik Mühendisliği
Keywords YÖKSİS
Articles 28 YÖKSİS 28 · OpenAlex 0 Total citations 1,844 h-index 22 · OpenAlex Q1 articles 25 Scopus · WoS Q1 18 Best field rank #26 / 842 Side field · top 3.1% Co-authors 53 2 Turkish institutions

Citation impact

OpenAlex YÖKSİS articles matched in OpenAlex: 28 + YÖKSİS · co-author record: 1
h-index 22 Percentile in Türkiye: 98 #62 of 1,360 at their university by h-index
i10-index
28
Total citations
1,844
Top 2.0% in Türkiye
Per article
63.6
FWCI
4.78
1.00 = world average
World top 1%
1
World top 10%
22

Most cited articles

  1. Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes 2012 world top 1% 161 citations
  2. Polarization-engineered GaN/InGaN/GaN tunnel diodes 2010 world top 10% 153 citations
  3. Polarity in GaN and ZnO: Theory, measurement, growth, and devices 2016 world top 10% 143 citations
How is this computed?

h-index and citations are computed from the citation counts of this academic’s YÖKSİS articles matched in OpenAlex (not Google Scholar, WoS or Scopus). Unmatched articles are not included. 1 articles (26 citations) tagged with this academic’s YÖK author id in co-authors’ YÖKSİS records count only towards citations, h-index and i10; article counts, percentiles and rankings use their own YÖKSİS list.

Field ranking

YÖKSİS ?
Keyword rankings 3

Collaboration network

From the author lists of YÖKSİS publication records. Duplicate records of a work count once; institutions are co-authors’ current YÖKSİS affiliations.

Co-authors
53
With an akaturk profile
2
Turkish institutions
2
Co-authored works
%93

Academic co-authors 2

  1. EMRE GÜR Profesör · Eskişehir Osmangazi Üniversitesi 1
  2. İLKAY DEMİR Profesör · Sivas Cumhuriyet Üniversitesi 1

National collaboration 2 institutions

  1. Eskişehir Osmangazi Üniversitesi 1 works · 1 academics
  2. Sivas Cumhuriyet Üniversitesi 1 works · 1 academics

Other co-authors (incl. international) 51

Siddharth Rajan 22Sriram Krishnamoorthy 17Yuewei Zhang 13Andrew Allerman 8Andrew Armstrong 8Michael W. Moseley 7Sanyam Bajaj 7Pil Sung Park 6Jinwoo Hwang 5Jared Johnson 4Digbijoy N. Nath 3D. N. Nath 2Hamdin Özden 2Ting-Hsiang Hung 2Aaron R. ArehartAchim TrampertAimee L. PriceBinzhi LiuDavid J. MeyerEduardo M. ChumbesFatma GölbaşıGabriel CalderonGuy FeuilletHubert RenevierJ. SahooJacob KhurginJesus Zuniga-PerezJuan Sebastian ReparazKarine HestrofferLiverios LymperakisMarkus R. WagnerMichele EspostoN. SomaiahOliver BrandtOmor F. ShoronR. MuralidharanSergio Fernandez-GarridoShahadat H. SohelShahed RezaStacia Keller

Show all (51)

Stephanie RennessonTaha SaquibTomas PalaciosTowhidur RazzakVincent ConsonniVishank TalesaraWenyuan SunWu LuXiang KongZane Jamal-EddineZhichao Yang

Authors without an akaturk profile (international researchers, retired or former academics, students, clinicians) are grouped by name spelling; short forms such as “Gulluce M.” join the single full name they match.

Indexes and citation percentiles

?
TR Index 1 articles
OpenAlex citation percentile
Top 1%1
Top 10%22
Avg · n 28 %89.5
Other counts

Scopus (SJR)

  • YÖKSİS rows 28

WoS (JCR)

  • YÖKSİS rows 28

Articles

Articles with YÖKSİS and OpenAlex source split; narrow by quartile or TR Index.

28articles

Journals with publications

10 journals

Narrow down

Scopus (SJR)
Q125 Q22 Q30 Q41
WoS (JCR)
Q118 Q27 Q33 Q40
TR Index
1articles

Article list

  1. 2025 Characteristics of Single Crystalline Rutile GeO2 Film Grown on Sapphire by Chemical Vapor Deposition with a high growth rate ∼2.2 µm/hr Journal of Alloys and Compounds DOI 10.1016/j.jallcom.2025.178591 YÖKSİS SJR Q1 JCR Q1 OpenAlex top 10% OpenAlex 93.6%
  2. 2024 Chemical vapor deposition growth of β‐Ga2O3 on Si- and C- face off-axis 4H–SiC at high temperature Materials Science in Semiconductor Processing DOI 10.1016/j.mssp.2023.107968 YÖKSİS SJR Q1 JCR Q2 OpenAlex 74.4%
  3. 2024 Carrier transport in LPCVD grown Ge-doped β-Ga2O3/4H-SiC isotype heterojunction Journal of Applied Physics DOI 10.1063/5.0188055 YÖKSİS SJR Q2 JCR Q3 OpenAlex 68.6%
  4. 2022 Close oxygen coupled low-pressure chemical vapor deposition growth of high quality β-Ga2O3 on sapphire Materials Science in Semiconductor Processing DOI 10.1016/j.mssp.2022.106645 YÖKSİS SJR Q1 JCR Q2 OpenAlex 57.3%
  5. 2021 Investigating the effect of self-trapped holes in the current gain mechanism of β−Ga2O3 Schottky diode photodetectors TURKISH JOURNAL OF PHYSICS DOI 10.3906/fiz-2102-12 YÖKSİS TR Index SJR Q4 JCR Q3 OpenAlex 42.2%
  6. 2020 Simulation of β-Ga2O3 vertical Schottky diode based photodetectors revealing average hole mobility of 20 cm2 V−1 s−1 JOURNAL OF APPLIED PHYSICS DOI 10.1063/1.5136306 YÖKSİS SJR Q2 JCR Q2 OpenAlex 72.7%
  7. 2018 Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8 external quantum efficiency APPLIED PHYSICS LETTERS DOI 10.1063/1.5017045 YÖKSİS SJR Q1 JCR Q1 OpenAlex top 10% OpenAlex 97.2%
  8. 2018 High Al-Content AlGaN Transistor With 0.5 A/mm Current Density and Lateral Breakdown Field Exceeding 3.6 MV/cm IEEE ELECTRON DEVICE LETTERS DOI 10.1109/LED.2017.2780221 YÖKSİS SJR Q1 JCR Q1 OpenAlex top 10% OpenAlex 96.7%
  9. 2017 Tunnel-injected sub-260nm ultraviolet light emitting diodes APPLIED PHYSICS LETTERS DOI 10.1063/1.4983352 YÖKSİS SJR Q1 JCR Q1 OpenAlex top 10% OpenAlex 97.4%
  10. 2017 Graded AlGaN Channel Transistors for Improved Current and Power Gain Linearity IEEE TRANSACTIONS ON ELECTRON DEVICES DOI 10.1109/TED.2017.2713784 YÖKSİS SJR Q1 JCR Q2 OpenAlex top 10% OpenAlex 95.1%
  11. 2017 Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs APPLIED PHYSICS LETTERS DOI 10.1063/1.4997328 YÖKSİS SJR Q1 JCR Q1 OpenAlex top 10% OpenAlex 93.9%
  12. 2017 Ultralow-voltage-drop GaN/InGaN/GaN tunnel junctions with 12 indium content APPLIED PHYSICS EXPRESS DOI 10.7567/APEX.10.121003 YÖKSİS SJR Q1 JCR Q2 OpenAlex 75.5%
  13. 2016 Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions APPLIED PHYSICS LETTERS DOI 10.1063/1.4962900 YÖKSİS SJR Q1 JCR Q1 OpenAlex top 10% OpenAlex 96.7%
  14. 2016 Polarity in GaN and ZnO: Theory, measurement, growth, and devices APPLIED PHYSICS REVIEWS DOI 10.1063/1.4963919 YÖKSİS SJR Q1 JCR Q1 OpenAlex top 10% OpenAlex 97.3%
  15. 2016 Low-resistance GaN tunnel homojunctions with 150 kA/cm(2) current and repeatable negative differential resistance APPLIED PHYSICS LETTERS DOI 10.1063/1.4944998 YÖKSİS SJR Q1 JCR Q1 OpenAlex top 10% OpenAlex 97.6%
  16. 2016 Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes APPLIED PHYSICS LETTERS DOI 10.1063/1.4967698 YÖKSİS SJR Q1 JCR Q1 OpenAlex top 10% OpenAlex 94.4%
  17. 2016 Enhanced light extraction in tunnel junction-enabled top emitting UV LEDs APPLIED PHYSICS EXPRESS DOI 10.7567/APEX.9.052102 YÖKSİS SJR Q1 JCR Q2 OpenAlex top 10% OpenAlex 95.4%
  18. 2016 AlGaN channel field effect transistors with graded heterostructure ohmic contacts APPLIED PHYSICS LETTERS DOI 10.1063/1.4963860 YÖKSİS SJR Q1 JCR Q1 OpenAlex top 10% OpenAlex 98.1%
  19. 2015 Density-dependent electron transport and precise modeling of GaN high electron mobility transistors APPLIED PHYSICS LETTERS DOI 10.1063/1.4933181 YÖKSİS SJR Q1 JCR Q1 OpenAlex top 10% OpenAlex 93.3%
  20. 2015 Interband tunneling for hole injection in III-nitride ultraviolet emitters APPLIED PHYSICS LETTERS DOI 10.1063/1.4917529 YÖKSİS SJR Q1 JCR Q1 OpenAlex top 10% OpenAlex 97.6%

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