Article detail · 2021
A comparative investigation of 980 nm GaAs and 1550 nm InP-based diode lasers
- Year
- 2021
- Type
- article
Data source split
- YÖKSİS YÖKSİS article record
- YÖKSİS venue Laser Physics
- Catalog match (ISSN) Laser Physics
- OpenAlex OpenAlex enrichment (abstract, citations, topics)
Abstract
English (OpenAlex)
Abstract Transient and steady-state characteristics of 1550 nm AlGaInAs/InP and 980 nm InGaAs/GaAs diode lasers were comparatively modeled using rate equations. The variations of the number of electrons ( N – t ) and the output power ( P out – t ) with time were examined in the transient regime for the both lasers. In addition steady-state characteristics, the number of electrons ( N – I ) and the output power versus current ( L – I ), was also investigated for different values of cavity length, stripe-width and active layer thickness. We also verified for both of the lasers that L – I simulation results are well agreed with the experimental results.
Topics
- Semiconductor Lasers and Optical Devices
- Advanced Fiber Laser Technologies
- Photonic and Optical Devices
Primary topic Semiconductor Lasers and Optical Devices