Makale detayı · 2021
A comparative investigation of 980 nm GaAs and 1550 nm InP-based diode lasers
- Yıl
- 2021
- Tür
- article
Veri kaynağı ayrımı
- YÖKSİS YÖKSİS makale kaydı
- YÖKSİS dergi adı Laser Physics
- Katalog eşleşmesi (ISSN) Laser Physics
- OpenAlex OpenAlex zenginleştirmesi (özet, atıf, konular)
Özet
İngilizce (OpenAlex)
Abstract Transient and steady-state characteristics of 1550 nm AlGaInAs/InP and 980 nm InGaAs/GaAs diode lasers were comparatively modeled using rate equations. The variations of the number of electrons ( N – t ) and the output power ( P out – t ) with time were examined in the transient regime for the both lasers. In addition steady-state characteristics, the number of electrons ( N – I ) and the output power versus current ( L – I ), was also investigated for different values of cavity length, stripe-width and active layer thickness. We also verified for both of the lasers that L – I simulation results are well agreed with the experimental results.
Konular
- Semiconductor Lasers and Optical Devices
- Advanced Fiber Laser Technologies
- Photonic and Optical Devices
Birincil konu Semiconductor Lasers and Optical Devices