Electric and dielectric responses of Au/n-Si structure by Mn doped PVC interfacial layers

OpenAlex · English

Abstract This paper has investigated and compared the impact of polyvinyl chloride (PVC) without/with manganese (Mn) metallic nanoparticles interfacial layer on the electric and impedance characteristics of Schottky diode (SD) with a structure of Au/n-Si (MS). The structures of these two metal-polymer-semiconductor (MPS) SDs are Au/PVC/n-Si and Au/PVC:Mn/n-Si. A detailed description of the SDs manufacturing process is given. The x-ray diffraction (XRD) analysis, Scanning Electron Microscope (FE-SEM) images, and Electron Dispersive x-ray (EDX) spectroscopy are three methods that have been utilized to examine mean size of crystallite, morphology of surface, purity specification. The fundamental electronic variables of these devices are ascertained and contrasted with one another using the I-V characteristic measurement at ±6 V. Ohm’s law, Thermionic Emission (TE) theory, modified Norde, and Cheung functions are used to calculate the SDs’ leakage current (I0), ideality coefficient (n), potential barrier height (BH), shunt (Rsh), and series (Rs) resistances. Investigations are conducted on the energy dependence of surface states density (Nss) and the current conduction mechanisms (CCMs) for both reverse and forward biases. These interfacial layers are known to decrease the n, Rs, and Nss. The PVC polymer interlayer leads to improve the efficiency of the MS-type SD, but it does not when doped by Mn nanoparticles. Additionally, by measuring impedance at a bias of 1.5 V and 100 Hz-1 MHz frequency range, the frequency dependence of dielectric properties of the prepared SDs is studied. The dielectric permittivity, dielectric loss tangent, electronic modulus, and ac electronic conductivity of these SDs are all studied.