Article detail · 2025
A detailed analysis of electrical parameters and energy dependence of interface Traps in Au-(Co:PVA)-nSi-Al structure via impedance measurements
- Year
- 2025
- Type
- article
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- YÖKSİS YÖKSİS article record
- YÖKSİS venue Journal of Materials Science: Materials in Electronics
- Catalog match (ISSN) Journal of Materials Science: Materials in Electronics
- OpenAlex OpenAlex enrichment (abstract, citations, topics)
Abstract
OpenAlex · English
Abstract In this study, impedance measurements of the Au-(Co:PVA)-nSi-Al structure were conducted across a frequency range of 1–1000 kHz and a voltage range of − 3.5 V to + 2 V. Following this, the voltage and frequency dependence of key electrical parameters including the density of donor atoms ( N D ), built-in voltage ( qV bi ), barrier height ( Φ B ), depletion layer width ( W D ), and maximum electric field ( E m ) were derived from the linear region of the 1/ C 2 versus V plots. The voltage-dependent density of interface traps ( N it ) was determined using three distinct methods: high-low frequency capacitance, the Hill-Coleman, and parallel conductance methods. Additionally, the voltage-dependent series resistance ( R s ) was extracted from the Nicollian-Brews model for each frequency. The experimental results revealed that nearly all fundamental electronic parameters exhibit significant variations with both frequency and voltage, particularly at low and intermediate frequencies. These variations are attributed to the specific distribution of N it at the interlayer-semiconductor interface, their relaxation times ( τ ), the (Co:PVA) interlayer, and the R s . To mitigate the influence of R s on the high-frequency C / V and G / ω - V curves, corrections were applied at 1 MHz. It was observed that while N it predominantly influences the inversion and depletion regimes at lower frequencies, the R s becomes the dominant factor in the accumulation regime at higher frequencies.
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Citations
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13 citations
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15 publications in the local catalog that cite this work (OpenAlex reference match; not the full global list).
- Comprehensive Investigation of Negative Capacitance and Inductive Behavior in Pure and 3% and 5% Ni-Doped PVP-Based Au/n-Si (MS) Schottky Diodes (SDs) 2025
- Dielectric response of Au/(Co:PVA)/n-Si/Al structures under varying frequencies and bias voltages 2025
- On the electrical parameters, conduction mechanisms depend on temperature and voltage, and thermal sensor applications in the Re/n‑GaAs/Au Schottky diodes 2026
- Exploring the dielectric and AC transport characteristics of Au/(Sn:Fe2O3)/n-Si diodes using impedance spectroscopy over extended frequency and voltage intervals 2025
- Exploring the dielectric and AC transport characteristics of Au/(Sn:Fe2O3)/n-Si diodes using impedance spectroscopy over extended frequency and voltage intervals 2025
- Analysis of the electrical parameters, frequency, and voltage dependence of surface states and series resistance in Au/n-Si Schottky diodes (SDs) with (Fe2O3) interlayer 2025
- Analysis of the electrical parameters, frequency, and voltage dependence of surface states and series resistance in Au/n-Si Schottky diodes (SDs) with (Fe2O3) interlayer 2025
- Analysis of the electrical parameters, frequency, and voltage dependence of surface states and series resistance in Au/n-Si Schottky diodes (SDs) with (Fe2O3) interlayer 2025
- Optimizing Schottky barrier diodes: the role of PVC and PVC: molybdenum interlayers in electrophysical properties 2025
- Optimizing Schottky barrier diodes: the role of PVC and PVC: molybdenum interlayers in electrophysical properties 2025