Article detail · 2021
The temperature induced current transport characteristics in the orthoferrite YbFeO3−δ thin film/p-type Si structure
Journal
Journal of Physics: Condensed MatterISSN 0953-8984
The ISSN points to another catalog journal; the name is from the YÖKSİS record.
- Year
- 2021
- Type
- article
Data source split
- YÖKSİS YÖKSİS article record
- YÖKSİS venue Journal of Physics: Condensed Matter
- Catalog match (ISSN) Journal of Physics Condensed Matter
- OpenAlex OpenAlex enrichment (abstract, citations, topics)
Abstract
OpenAlex · English
Abstract The perovskite ytterbium ferrite is a new ferroelectric semiconductor material. We presented the temperature induced current–voltage ( I – V ) characteristics of the Al/YbFeO 3− δ /p-Si/Al hetero-junction. The orthoferrite YbFeO 3− δ thin films were deposited on a single crystal p-type Si substrate by a radio frequency magnetron sputtering system. The potential barrier height (BH) Φ b and ideality factor n of the heterojunction were obtained by thermionic emission current method based on the recommendations in the literature. The fact that the calculated slopes of I – V curves become temperature independent implying that the field emission current mechanism takes place across the device, which has been explained by the presence of the spatial inhomogeneity of BHs or potential fluctuations. Moreover, a tunneling transmission coefficient value of 26.67 was obtained for the ferroelectric YbFeO 3− δ layer at the Al/p-Si interface.
Topics
Citations
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19 citations
OpenAlex cited_by_count (cache / database)
16 publications in the local catalog that cite this work (OpenAlex reference match; not the full global list).
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