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Academician

HATİCE ASIL UĞURLU

DOÇENT

ISPARTA UYGULAMALI BİLİMLER ÜNİVERSİTESİ ISPARTA OSB MESLEK YÜKSEKOKULU MAKİNE VE METAL TEKNOLOJİLERİ BÖLÜMÜ

  • Ana Dal Fen Bilimleri ve Matematik Temel Alanı
  • Yan Dal Fizik

A quick look at recorded outputs — details below.

  • Articles 14
  • Projects 0
  • Books 0
  • Proceedings 22
  • Patents 0
  • Artistic 0
Scopus (SJR) Q1 5 Q2 3 Q3 1 Q4 1
WoS (JCR) Q1 2 Q2 7 Q3 2 Q4 0
TR Index 2 articles

Field+year+type normalized OpenAlex percentiles — not Clarivate ESI / SciVal.

Top 1% articles 0
Top 10% articles 0
Avg percentile 57.0%
Top 1% share 0.0%
Top 10% share 0.0%

Articles

Articles with YÖKSİS and OpenAlex source split; narrow by quartile or TR Index.

Index filters

14 publications total

Scopus (SJR)
Q1 5 Q2 3 Q3 1 Q4 1
WoS (JCR)
Q1 2 Q2 7 Q3 2 Q4 0
TR Index
2 articles

Article list

  1. 2022 Fabrication and Electrical Characterization of Ti/p-Si Metal Semiconductor Schottky Structures at Low Temperature Journal of Electronic Materials DOI 10.1007/s11664-022-09955-3 YÖKSİS SJR Q3 JCR Q3 OpenAlex 65.0%
  2. 2022 Ti/ p-GaN Schottky Diyotunun Elektriksel Parametrelerinin İncelenmesi Journal of the Institute of Science and Technology DOI 10.21597/jist.1024690 YÖKSİS OpenAlex 4.7%
  3. 2022 COATING TiO2 FILM USING THE SPIN METHOD OF AISI 304 STAINLESS STEEL and INVESTIGATION OF THE STRUCTURAL PROPERTIES International Journal of Innovative Engineering Applications DOI 10.46460/ijiea.1070575 YÖKSİS TR Index OpenAlex 24.9%
  4. 2022 Ti/ p-Si Schottky Diyot Parametrelerinin Belirlenmesi için I – V Yöntemlerinin Karşılaştırılması Yüzüncü Yıl Üniversitesi Fen Bilimleri Enstitüsü Dergisi DOI 10.53433/yyufbed.1058643 YÖKSİS TR Index OpenAlex 41.2%
  5. 2021 The effect of thermal annealing on Ti/p-Si Schottky diodes Journal of Materials Science: Materials in Electronics DOI 10.1007/s10854-021-06084-1 YÖKSİS SJR Q2 JCR Q2 OpenAlex 80.9%
  6. 2019 Electrochemical growth of ZnSe thin films, characterization and heterojunction applications Materials Research Express DOI 10.1088/2053-1591/ab4679 YÖKSİS SJR Q2 JCR Q3 OpenAlex 52.0%
  7. 2021 The effect of thermal annealing on Ti/p-Si Schottky diodes Journal of Materials Science: Materials in Electronics DOI 10.1007/s10854-021-06084-1 YÖKSİS SJR Q2 JCR Q2 OpenAlex 80.9%
  8. 2013 Temperature dependent current voltage characteristicsof electrodeposited p ZnO n Si heterojunction International Journal of PhysicalSciences DOI 10.5897/IJPS2013.3851 YÖKSİS SJR Q4 JCR Q2 OpenAlex 73.5%
  9. 2010 The effect of the electron irradiation on the series resistance of Au Ni 6H SiC and Au Ni 4H SiC Schottky contacts Nuclear Instruments and Methods in Physics Research B YÖKSİS SJR Q1 JCR Q2
  10. 2010 Structural, optical, and electrical properties of n-ZnO/p-GaAs heterojunction physica status solidi (a) DOI 10.1002/pssa.200925488 YÖKSİS SJR Q1 JCR Q2 OpenAlex 70.4%
  11. 2010 EFFECT OF DIFFERENT SOLUTIONS ONELECTROCHEMICAL DEPOSITION OF ZnO Azerbaijan Journal of Physics:Fizika YÖKSİS
  12. 2009 Electrochemical growth of n-ZnO onto the p-type GaN substrate: p-n heterojunction characteristics Applied Physics Letters DOI 10.1063/1.3157268 YÖKSİS SJR Q1 JCR Q1 OpenAlex 76.1%
  13. 2009 Electrical characterization of Au n ZnO Schottky contacts on n Si JOURNAL OF ALLOYS AND COMPOUNDS YÖKSİS SJR Q1 JCR Q1
  14. 2009 Oxygen effects on radiation hardness of ZnO thin films Journal of Vacuum Science Technology B: Microelectronics and Nanometer Structures DOI http://scitation.aip.org/content/avs/journal/jvstb/27/5/10.1116/1.3222865 YÖKSİS JCR Q2
  15. 2008 Optical and structural properties of ZnO thin films effects of high energy electron irradiation and annealing Nuclear Instruments and Methods in Physics Research B YÖKSİS SJR Q1 JCR Q2

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