Academician
BEŞİRE GÖNÜL
PROFESÖR
GAZİANTEP ÜNİVERSİTESİ MÜHENDİSLİK FAKÜLTESİ FİZİK MÜHENDİSLİĞİ BÖLÜMÜ
- Ana Dal Fen Bilimleri ve Matematik Temel Alanı
- Yan Dal Fizik
A quick look at recorded outputs — details below.
- Articles 23
- Projects 0
- Books 0
- Proceedings 0
- Patents 0
- Artistic 0
Scopus (SJR)
Q1
1
Q2
2
Q3
0
Q4
1
WoS (JCR)
Q1
0
Q2
3
Q3
1
Q4
0
TR Index
1
articles
Field+year+type normalized OpenAlex percentiles — not Clarivate ESI / SciVal.
Top 1% articles
0
Top 10% articles
0
Avg percentile
53.6%
Top 1% share
0.0%
Top 10% share
0.0%
Articles
Articles with YÖKSİS and OpenAlex source split; narrow by quartile or TR Index.
Article list
- 2017 Achieving carrier and photon confinement in Ga(NAsP)/AlGaP/GaP QWs on Si substrates YÖKSİS TR Index SJR Q4 JCR Q3
- 2016 Revealing the effects of nitrogen on threshold current density in GaNxAsyP1−x−y/GaP/AlzGa1−zP type I QW laser structures by hydrostatic pressure YÖKSİS SJR Q2 JCR Q2 OpenAlex 0.4%
- 2014 Modeling of the atomic structure and electronic properties of amorphous GaN1 x Asx YÖKSİS OpenAlex 86.8%
- 2014 A theoretical investigation of the band alignment of type-I direct band gap dilute nitride phosphide alloy of GaNxAsyP1-x-y/GaP QWs on GaP substrates YÖKSİS SJR Q2 JCR Q2 OpenAlex 61.8%
- 2013 An Exactly Solvable Algebraic Model for Single Quantum Well Treatments YÖKSİS
- 2011 The comparison of the band alignment of GaInAsN quantum wells on GaAs and InP substrates for 001 and 111 orientations YÖKSİS
- 2010 An analysis of the effect of nitrogen and a screened by free carriers Coulomb field on the binding energy of hydrogenic shallow donors in GaInAsN YÖKSİS
- 2009 The critical layer thickness of InGaNAsSb QWs on GaAs and InP substrates for 001 and 111 orientations YÖKSİS
- 2009 Critical layer thickness of GaIn(N)As(Sb) QWs on GaAs and InP substrates for (001) and (111) orientations YÖKSİS SJR Q1 JCR Q2 OpenAlex 65.2%
- 2007 A theoretical investigation of carrier and optical mode confinement in GaInNAs QWs on GaAs and InP substrates YÖKSİS
- 2006 Analysis of the band alignment of highly strained indium rich GaInNAs QWs on InP substrates YÖKSİS
- 2006 Comparison of the band alignment of strained and strain compensated GaInNAs QWs on GaAs and InP substrates YÖKSİS
- 2005 A Theoretical Comparison of the 1 3 doped Quantum well Lasers for different concentrations YÖKSİS
- 2004 A Theoretical Comparison of the Band Alignment of Conventionally Strained and Strain compensated Phosphorus Aluminum and Nitrogen based 1 3 QW Lasers YÖKSİS
- 2004 Comparative Study of the Band offset Ratio of Conventionally Strained and Strain compensated InGaAs GaAs QW Lasers YÖKSİS
- 2004 Theoretical Comparison of Pressure Dependence of Threshold Current of Phosphorus Aluminium and Nitrogen based 1 3 mm Lasers YÖKSİS
- 2003 Influence of Doping on Gain Characteristics of GaInNAs GaAs Quantum Well Lasers YÖKSİS
- 2002 Supersymmetric Approach To Exactly Solvable Systems With Position Dependent Masses YÖKSİS
- 2002 Exact Solutions of Effective mass Schrodinger Equations YÖKSİS
- 1999 Influence of Effective Mass and Energy Band Splittings on the Radiative Characteristics of QW Lasers at Transparency YÖKSİS