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akaturk Academic measurement

Academician profile · DOÇENT

GÖKHAN UTLU

EGE ÜNİVERSİTESİ

  • Ana Dal Fen Bilimleri ve Matematik Temel Alanı
  • Yan Dal Fizik
  • FEN FAKÜLTESİ
  • FİZİK BÖLÜMÜ
Articles 27 YÖKSİS 27
Projects 1
Books 0
Proceedings 25
Patents 1
Artistic 1
Scopus (SJR)
Q1 7 Q2 11 Q3 1 Q4 6
WoS (JCR)
Q1 7 Q2 4 Q3 7 Q4 6
TR Index 0 articles

Scopus (SJR)

Q1 7 Q2 11 Q3 1 Q4 6

WoS (JCR)

Q1 7 Q2 4 Q3 7 Q4 6

TR Index

0 articles

27 publications total

Articles

  1. 2023 Effect of deposition time on the structural and electrical properties of electrodeposited PSi/Cu2O/ZnO heterojunction Elsevier BV DOI 10.1016/j.cplett.2023.140449
  2. 2023 Preparation and Characterization of Electrochemically Deposited Cu2O/ZnO Heterojunctions on Porous Silicon ACS OMEGA DOI 10.1021/acsomega.3c01438
  3. 2023 Preparation and Characterization of Electrochemically Deposited Cu2O/ZnO Heterojunctions on Porous Silicon American Chemical Society (ACS) DOI 10.1021/acsomega.3c01438
  4. 2023 Effect of deposition time on the structural and electrical properties of electrodeposited PSi/Cu2O/ZnO heterojunction Chemical Physics Letters DOI 10.1016/j.cplett.2023.140449
  5. 2020 Mechanisms behind slow photoresponse character of Pulsed Electron Deposited ZnO thin films Materials Science in Semiconductor Processing DOI https://linkinghub.elsevier.com/retrieve/pii/S1369800119315859
  6. 2020 Mechanisms behind slow photoresponse character of Pulsed Electron Deposited ZnO thin films MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING DOI 10.1016/j.mssp.2019.104863
  7. 2019 Growth and characterization of ZnO nanostructures on porous silicon substrates: Effect of solution temperature Chemical Physics Letters DOI 10.1016/j.cplett.2019.136827
  8. 2019 Structural Investigation of ZnO Thin Films Obtained by Annealing after Thermal Evaporation Sakarya University Journal of Science DOI http://dergipark.gov.tr/doi/10.16984/saufenbilder.450190
  9. 2019 The comparison of transient photocurrent spectroscopy measurements of Pulsed Electron Deposited ZnO thin film for air and vacuum ambient conditions THIN SOLID FILMS DOI 10.1016/j.tsf.2019.04.030
  10. 2019 Thickness and Temperature Dependence of ZnO/Glass Thin Film Systems Obtained by Thermal Evaporation Acta Physica Polonica A DOI http://przyrbwn.icm.edu.pl/APP/PDF/136/app136z3p08.pdf
  11. 2019 The comparison of transient photocurrent spectroscopy measurements of Pulsed Electron Deposited ZnO thin film for air and vacuum ambient conditions THIN SOLID FILMS DOI 10.1016/j.tsf.2019.04.030
  12. 2019 Growth and characterization of ZnO nanostructures on porous silicon substrates: Effect of solution temperature CHEMICAL PHYSICS LETTERS DOI 10.1016/j.cplett.2019.136827
  13. 2018 Effect of Annealing on ZnO Thin Films Deposited by Thermal Evaporation on Si (100) Substrates International Journal of Scientific and Technological Research DOI 10.7176/JSTR
  14. 2017 THE EFFECT OF THICKNESS OF SILVER THIN FILM ON STRUCTURAL AND OPTICAL PROPERTIES OF POROUS SILICON Surface Review and Letters DOI 10.1142/S0218625X17500743
  15. 2016 THE EFFECT OF THICKNESS OF SILVER THIN FILM ON STRUCTURAL AND OPTICAL PROPERTIES OF POROUS SILICON Surface Review and Letters DOI 10.1142/S0218625X17500743
  16. 2016 THE EFFECT OF THICKNESS OF SILVER THIN FILM ON STRUCTURAL AND OPTICAL PROPERTIES OF POROUS SILICON Surface Review and Letters DOI 10.1142/S0218625X17500743
  17. 2016 THE EFFECT OF THICKNESS OF SILVER THIN FILM ON STRUCTURAL AND OPTICAL PROPERTIES OF POROUS SILICON SURFACE REVIEW AND LETTERS DOI 10.1142/S0218625X17500743
  18. 2014 The effects of grain boundary scattering on electrical resistivity of Ag/NiSi silicide films formed on silicon substrate at 500°C by RTA Applied Surface Science DOI 10.1016/j.apsusc.2014.02.145
  19. 2014 The calculation of the reflection coefficients by analyzing resistivity data of the Ni–Si silicide films formed at 850°C by RTA Microelectronic Engineering DOI 10.1016/j.mee.2013.07.019
  20. 2012 Temperature and thickness dependence of the grain boundary scattering in the Ni–Si silicide films formed on silicon substrate at 500°C by RTA Materials Chemistry and Physics DOI https://linkinghub.elsevier.com/retrieve/pii/S025405841100962X

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