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Academician

HAYRİYE GÖKÇEN ÇETİNKAYA

PROFESÖR

GAZİ ÜNİVERSİTESİ SAĞLIK HİZMETLERİ MESLEK YÜKSEKOKULU TIBBİ HİZMETLER VE TEKNİKLER BÖLÜMÜ

Research topics OpenAlex
Keywords YÖKSİS
Academic summary YÖKSİS and OpenAlex counted separately.
Articles 28
YÖKSİS28 OpenAlex0
Projects 5
Books 0
Proceedings 24

Citation impact

OpenAlex YÖKSİS articles matched in OpenAlex: 2
h-index 2 Percentile in Türkiye: 33 #785 of 1,484 at their university by h-index
i10-index
2
Total citations
130
Top 29% in Türkiye
Per article
65.0
FWCI
5.34
1.00 = world average
World top 1%
0
World top 10%
2

Most cited articles

  1. Synthesis, electrical and photo-sensing characteristics of the Al/(PCBM/NiO: ZnO)/p-Si nanocomposite structures 2021 world top 10% 91 citations
  2. Electrical characteristics of Au/n-Si (MS) Schottky Diodes (SDs) with and without different rates (grapheneCa1.9Pr0.1Co4Ox-doped poly(vinyl alcohol)) interfacial layer 2017 world top 10% 39 citations

h-index and citations are computed from the citation counts of this academic’s YÖKSİS articles matched in OpenAlex (not Google Scholar, WoS or Scopus). Unmatched articles are not included.

Field ranking

YÖKSİS ?

Index quartiles

?
Scopus (SJR) 27
  • Q1 5
  • Q2 18
  • Q3 4
  • Q4 0
WoS (JCR) 27
  • Q1 5
  • Q2 14
  • Q3 6
  • Q4 2
TR Index TR Index

1 articles

OpenAlex citation percentile
  • Top 1% 0
  • Top 10% 2
  • Avg 94.6%
  • n 2
Other counts

Scopus (SJR)

  • YÖKSİS rows 27

WoS (JCR)

  • YÖKSİS rows 27

Articles

Articles with YÖKSİS and OpenAlex source split; narrow by quartile or TR Index.

Journals with publications

16 journals
Scopus (SJR)
Q1 5 Q2 18 Q3 4 Q4 0
WoS (JCR)
Q1 5 Q2 14 Q3 6 Q4 2
TR Index
1 articles

Article list

  1. 2025 Interface and dielectric properties of Al/p-Si diode by organic composite interlayer for MOS Journal of Materials Science: Materials in Electronics DOI 10.1007/s10854-025-14910-z YÖKSİS SJR Q2 JCR Q2
  2. 2025 On the possible current transport mechanisms, Energy-dependent distribution profile of interface states, and temperature sensitivity in Au/(PEG:Er–MnFe2O4)/n–Si structures Journal of Materials Science: Materials in Electronics DOI 10.1007/s10854-025-14923-8 YÖKSİS SJR Q2 JCR Q2
  3. 2025 Synthesis and photoelectric properties of TlInS2 nanoflake-doped PVP thin-film photodetectors Journal of Materials Science: Materials in Electronics DOI 10.1007/s10854-025-16161-4 YÖKSİS SJR Q2 JCR Q2
  4. 2024 The Frequency Dependent of Main Electrical Parameters, Conductivity and Surface States in the Al/ (%0.5 Bi:ZnO)/p-Si/Au (MIS) Structures Silicon DOI 10.1007/s12633-024-02929-6 YÖKSİS SJR Q2 JCR Q2
  5. 2024 Investigation of the frequency effect on electrical modulus and dielectric properties of Al/p-Si structure with %0.5 Bi:ZnO interfacial layer Ionics DOI 10.1007/s11581-024-05527-z YÖKSİS SJR Q2 JCR Q3
  6. 2024 Examination of Electrical and Dielectric Parameters of Au/n-Si Schottky Barrier Diodes (SBDs) with Organic Perylene Interlayer Using Impedance Measurements Under Various Illumination Intensities Journal of Electronic Materials DOI 10.1007/s11664-024-11213-7 YÖKSİS SJR Q2 JCR Q2
  7. 2024 The capacitance/conductance and surface state intensity characteristics of the Al/(CMAT)/p-Si structures Physica Scripta DOI 10.1088/1402-4896/ad1c2b YÖKSİS SJR Q2 JCR Q2
  8. 2023 On the wide range frequency and voltage dependence of electrical features and density of surface states of the Al/(Cu:DLC)/p-Si/Au Schottky diodes (SDs) Springer Science and Business Media LLC DOI 10.1007/s10854-023-10247-7 YÖKSİS SJR Q2 JCR Q2
  9. 2023 Frequency-dependent electrical parameters and extracted voltage-dependent surface states in Al/DLC/p-Si structure using the conductance method Springer Science and Business Media LLC DOI 10.1007/s00339-023-06639-5 YÖKSİS SJR Q2 JCR Q2
  10. 2023 Optoelectronic characterization of Bi-doped ZnO nanocomposites for Schottky interlayer applications Elsevier BV DOI 10.1016/j.physb.2023.415338 YÖKSİS SJR Q2 JCR Q2
  11. 2023 Hybrid photonic device based on Graphene Oxide (GO) doped P3HT-PCBM/p-Silicon for photonic applications IOP Publishing DOI 10.1088/1402-4896/acfce2 YÖKSİS SJR Q2 JCR Q2
  12. 2023 The investigation of current-transport mechanisms (CTMs) in the Al/(In2S3:PVA)/p-Si (MPS)-type Schottky barrier diodes (SBDs) at low and intermediate temperatures Springer Science and Business Media LLC DOI 10.1007/s10854-023-10592-7 YÖKSİS SJR Q2 JCR Q2
  13. 2022 Doping rate, Interface states and Polarization Effects on Dielectric Properties, Electric Modulus, and AC Conductivity in PCBM/NiO:ZnO/p-Si Structures in Wide Frequency Range Springer Science and Business Media LLC DOI 10.1007/s12633-021-01640-0 YÖKSİS SJR Q2 JCR Q3
  14. 2022 Vertical CdTe:PVP/p-Si-Based Temperature Sensor by Using Aluminum Anode Schottky Contact Institute of Electrical and Electronics Engineers (IEEE) DOI 10.1109/JSEN.2022.3212867 YÖKSİS SJR Q1 JCR Q1
  15. 2021 Synthesis, electrical and photo-sensing characteristics of the Al/(PCBM/NiO: ZnO)/p-Si nanocomposite structures Sensors and Actuators DOI 10.1016/j.sna.2020.112449 YÖKSİS SJR Q1 JCR Q1 OpenAlex top 10% OpenAlex 98.3%
  16. 2021 Electrical parameters of Au/(%1Ni-PVA)/n-Si (MPS) structure: Surface states and their lifetimes Physica B: Condensed Matter DOI 10.1016/j.physb.2021.413207 YÖKSİS SJR Q2 JCR Q3
  17. 2019 The fabrication of Al/p-Si (MS) type photodiode with (2 ZnO-doped CuO) interfacial layer by sol gel method and their electrical characteristics Physica B: Condensed Matter DOI 10.1016/j.physb.2019.02.038 YÖKSİS SJR Q2 JCR Q3
  18. 2018 title Frequency and Voltage Dependent Profile of Dielectric Parameters and Electric Modulus for Al/(HgS-PVA)/ ip/i -Si Capacitor via Impedance Spectroscopy Method/title Journal of Nanoelectronics and Optoelectronics DOI 10.1166/jno.2018.2240 YÖKSİS SJR Q3 JCR Q4
  19. 2017 Diode-to-diode variation in dielectric parameters of identically prepared metal-ferroelectric-semiconductor structures Journal of Alloys and Compounds DOI 10.1016/j.jallcom.2017.09.030 YÖKSİS SJR Q1 JCR Q1
  20. 2017 Correlation between barrier height and ideality factor in identicallyprepared diodes of Al/Bi4Ti3O12/p-Si (MFS) structure with barrierinhomogeneity Journal of Alloys and Compounds DOI 10.1016/j.jallcom.2017.06.037 YÖKSİS SJR Q1 JCR Q1

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