İçeriğe geç
akaturk Akademik ölçüm
Giriş Kayıt

Akademisyen

ESRA EVCİN BAYDİLLİ

DOÇENT

HAKKARİ ÜNİVERSİTESİ MÜHENDİSLİK FAKÜLTESİ ELEKTRİK-ELEKTRONİK MÜHENDİSLİĞİ BÖLÜMÜ

  • Ana Dal Mühendislik Temel Alanı
  • Yan Dal Elektrik-Elektronik ve Haberleşme Mühendisliği

Kayıtlı çıktılara kısa bakış — ayrıntılar aşağıda.

  • Makale 15
  • Proje 0
  • Kitap 0
  • Bildiri 5
  • Patent 0
  • Sanatsal 0
Scopus (SJR) Q1 8 Q2 14 Q3 1 Q4 0
WoS (JCR) Q1 8 Q2 6 Q3 8 Q4 1
TR Index 1 makale

Alan+yıl+tür normalize OpenAlex yüzdelik — Clarivate ESI / SciVal değildir.

Üst %1 makale 0
Üst %10 makale 7
Ort. yüzdelik 79.4%
Üst %1 payı 0.0%
Üst %10 payı 29.2%

Makaleler

YÖKSİS ve OpenAlex kaynak ayrımıyla makaleler; quartile ve TR Index ile daraltabilirsiniz.

Dizin filtreleri

Toplam 15 yayın

Scopus (SJR)
Q1 8 Q2 14 Q3 1 Q4 0
WoS (JCR)
Q1 8 Q2 6 Q3 8 Q4 1
TR Index
1 makale

Makale listesi

  1. 2026 The role of Cu-doping in DLC interlayers on the electrical parameters of MIS-type Schottky devices: A Capacitance-Conductance analysis Applied Surface Science DOI 10.1016/j.apsusc.2026.166805 YÖKSİS SJR Q1 JCR Q1 OpenAlex 86.0%
  2. 2025 Dielectric properties and polarization mechanisms of the DLC-interlayered Schottky structures under low-moderate and high-temperatures Materials Science and Engineering: B DOI 10.1016/j.mseb.2025.118406 YÖKSİS SJR Q1 JCR Q2 OpenAlex üst %10 OpenAlex 95.1%
  3. 2024 The effect of Cu-doping to the DLC interlayer on the temperature dependent current-conduction mechanisms and barrier shape of the Schottky devices Materials Science in Semiconductor Processing DOI 10.1016/j.mssp.2024.108828 YÖKSİS SJR Q1 JCR Q2 OpenAlex 69.9%
  4. 2024 Overview of the irradiation-dependent behaviour of the negative dielectric properties of GaAs-based MIS devices Radiation Physics and Chemistry DOI 10.1016/j.radphyschem.2024.111877 YÖKSİS SJR Q2 JCR Q1 OpenAlex 85.5%
  5. 2024 The Role of Co/Zn-Doped Organic Interlayer on the Operating Performance of Schottky Devices as an Ionizing Radiation Sensor IEEE Sensors Journal DOI 10.1109/JSEN.2024.3387738 YÖKSİS SJR Q1 JCR Q1 OpenAlex 77.3%
  6. 2023 Investigation of the dielectric properties of Au/Bi4Ti3O12-SiO2/n-Si (MFIS) type structures depending on gamma-irradiation Microelectronics Reliability DOI 10.1016/j.microrel.2022.114868 YÖKSİS SJR Q2 JCR Q3 OpenAlex 50.5%
  7. 2023 The Comparison of the Temperature Susceptibility of the Serial Resistance Effect of Au/n-GaAs Type M/S Structures Gazi University Journal of Science Part A: Engineering and Innovation DOI 10.54287/gujsa.1206972 YÖKSİS TR Index OpenAlex 2.5%
  8. 2023 Determination of temperature sensitivity and current-transport mechanisms of the GaAs-based MS contact Materials Today Communications DOI 10.1016/j.mtcomm.2023.106380 YÖKSİS SJR Q2 JCR Q2 OpenAlex üst %10 OpenAlex 92.7%
  9. 2021 Evaluation of gamma-irradiation effects on the electrical properties of Al/(ZnO-PVA)/p-Si type Schottky diodes using current-voltage measurements Radiation Physics and Chemistry DOI 10.1016/j.radphyschem.2021.109430 YÖKSİS SJR Q2 JCR Q1 OpenAlex üst %10 OpenAlex 96.0%
  10. 2020 Detection of current transport mechanisms for graphene-doped-PVA interlayered metal/semiconductor structures Physica B: Condensed Matter DOI 10.1016/j.physb.2020.412457 YÖKSİS SJR Q2 JCR Q3 OpenAlex 89.7%
  11. 2020 Investigation of gamma-irradiation effects on electrical characteristics of Al/(ZnO–PVA)/p-Si Schottky diodes using capacitance and conductance measurements Journal of Materials Science: Materials in Electronics DOI 10.1007/s10854-020-03370-2 YÖKSİS SJR Q2 JCR Q3 OpenAlex 82.6%
  12. 2020 On the Multi-parallel Diodes Model in Au/PVA/n-GaAs Schottky Diodes and Investigation of Conduction Mechanisms (CMs) in a Temperature Range of 80–360 K Journal of Electronic Materials DOI 10.1007/s11664-020-08473-4 YÖKSİS SJR Q2 JCR Q3 OpenAlex 78.6%
  13. 2020 The determination of the temperature and voltage dependence of the main device parameters of Au/7%Gr-doped PVA/n-GaAs-type Schottky Diode (SD) Journal of Materials Science: Materials in Electronics DOI 10.1007/s10854-020-03799-5 YÖKSİS SJR Q2 JCR Q3 OpenAlex 65.6%
  14. 2026 The role of Cu-doping in DLC interlayers on the electrical parameters of MIS-type Schottky devices: A Capacitance-Conductance analysis Applied Surface Science DOI 10.1016/j.apsusc.2026.166805 YÖKSİS SJR Q1 JCR Q1 OpenAlex 86.0%
  15. 2026 Comprehensive dielectric analysis of Schottky devices with Cu-doped DLC interlayer: Temperature effects and polarization mechanisms Materials Science and Engineering: B DOI 10.1016/j.mseb.2026.119238 YÖKSİS SJR Q1 JCR Q2 OpenAlex üst %10 OpenAlex 91.5%
  16. 2025 Dielectric properties and polarization mechanisms of the DLC-interlayered Schottky structures under low-moderate and high-temperatures Materials Science and Engineering: B DOI 10.1016/j.mseb.2025.118406 YÖKSİS SJR Q1 JCR Q2 OpenAlex üst %10 OpenAlex 95.1%
  17. 2025 Negative capacitance and negative dielectric behavior of MIS device with Rhenium-Type Schottky contacts Solid-State Electronics DOI 10.1016/j.sse.2025.109204 YÖKSİS SJR Q3 JCR Q4 OpenAlex 83.7%
  18. 2024 The Role of Co/Zn-Doped Organic Interlayer on the Operating Performance of Schottky Devices as an Ionizing Radiation Sensor IEEE Sensors Journal DOI 10.1109/JSEN.2024.3387738 YÖKSİS SJR Q1 JCR Q1 OpenAlex 77.3%
  19. 2024 Overview of the irradiation-dependent behaviour of the negative dielectric properties of GaAs-based MIS devices Radiation Physics and Chemistry DOI 10.1016/j.radphyschem.2024.111877 YÖKSİS SJR Q2 JCR Q1 OpenAlex 85.5%
  20. 2023 Determination of temperature sensitivity and current-transport mechanisms of the GaAs-based MS contact Materials Today Communications DOI 10.1016/j.mtcomm.2023.106380 YÖKSİS SJR Q2 JCR Q2 OpenAlex üst %10 OpenAlex 92.7%

Akademisyenlere dön