The Role of Co/Zn-Doped Organic Interlayer on the Operating Performance of Schottky Devices as an Ionizing Radiation Sensor

OpenAlex İngilizce

This study was carried out to investigate the suitability of a Schottky device with a Co/Zn-doped organic interlayer (PVA) for use in radiation environments such as space (satellite systems) or nuclear plants. The current and capacitance-conductance data were obtained before and after radiation exposure and for some specific days after irradiation to understand whether the device is suitable for use as a rectifier contact or an ionizing radiation sensor, especially for satellite systems. Thus, it was observed that the current parameters tended to return to their original state in the early days, although the device showed a significant response to gamma rays. On the other hand, it was observed that the parameters obtained from the impedance spectroscopy methods remained stable for a while after radiation and then tended to approach their initial state. These behaviours occur due to the relaxation time of the radiation-induced surface states, and these sensitive parameters cannot prevent the device from being used as a radiation sensor or rectifier contact (i.e., MPS-type Schottky diode). As a result, it can be said that the device is a good candidate for use as a radiation sensor at first glance. However, these pieces of information are insufficient to use the device as a commercial sensor, and the device must successfully pass further experimental tests to decide this result.