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ENGİN TIRAŞ

PROFESÖR

ESKİŞEHİR TEKNİK ÜNİVERSİTESİ FEN FAKÜLTESİ FİZİK BÖLÜMÜ

  • Ana Dal Fen Bilimleri ve Matematik Temel Alanı
  • Yan Dal Fizik

Kayıtlı çıktılara kısa bakış — ayrıntılar aşağıda.

  • Makale 57
  • Proje 0
  • Kitap 9
  • Bildiri 38
  • Patent 0
  • Sanatsal 0
Scopus (SJR) Q1 23 Q2 22 Q3 7 Q4 1
WoS (JCR) Q1 8 Q2 21 Q3 17 Q4 3
TR Index 1 makale

Makaleler

YÖKSİS ve OpenAlex kaynak ayrımıyla makaleler; quartile ve TR Index ile daraltabilirsiniz.

Dizin filtreleri

Toplam 57 yayın

Scopus (SJR)
Q1 23 Q2 22 Q3 7 Q4 1
WoS (JCR)
Q1 8 Q2 21 Q3 17 Q4 3
TR Index
1 makale

Makale listesi

  1. 2026 Temperature controlled phase transition and characterization of Cu2O and CuO thin films grown at different growth temperatures via mist CVD Applied Physics A DOI 10.1007/s00339-026-09555-6 YÖKSİS SJR Q2 JCR Q2
  2. 2025 Design and realization of XOR, OR, and NAND light logic gates using GaAs heterostructure Applied Physics A DOI 10.1007/s00339-024-08213-z YÖKSİS SJR Q2 JCR Q2
  3. 2024 The comprehensive investigation of barrier layers on power loss mechanisms in AlGaN/GaN HEMT structures Materials Science and Engineering: B DOI 10.1016/j.mseb.2023.117075 YÖKSİS SJR Q1 JCR Q2
  4. 2024 Light Logic Gates with GaAs‐Based Structures physica status solidi (RRL) – Rapid Research Letters DOI 10.1002/pssr.202400173 YÖKSİS SJR Q2 JCR Q3
  5. 2024 A novel InGaN-based bidirectional wavelength converter and optical amplifier based on hot electron-induced blue light-emitting device Journal of Luminescence DOI 10.1016/j.jlumin.2024.120643 YÖKSİS SJR Q2 JCR Q2
  6. 2023 Portable Lightboard Use in Online Higher Education Open Praxis DOI 10.55982/openpraxis.15.2.548 YÖKSİS SJR Q2
  7. 2022 The investigation of photoluminescence properties in InxGa1-xN/GaN multiple quantum wells structures with varying well number Physica B: Condensed Matter DOI 10.1016/j.physb.2022.413703 YÖKSİS SJR Q2 JCR Q3
  8. 2021 Integer quantum Hall effect measurement analysis in Ga0.68In0.32N0.017As/GaAs quantum wells with various annealing time Physica B: Condensed Matter DOI 10.1016/j.physb.2021.413305 YÖKSİS SJR Q2 JCR Q3
  9. 2021 A novel hot carrier-induced blue light-emitting device Journal of Alloys and Compounds DOI 10.1016/j.jallcom.2021.160511 YÖKSİS SJR Q1 JCR Q1
  10. 2021 The effect of passivation layer, doping and spacer layer on electron- longitudinal optical phonon momentum relaxation time in Al0.3Ga0.7N/AlN/GaN heterostructures Materials Science in Semiconductor Processing DOI 10.1016/j.mssp.2020.105449 YÖKSİS SJR Q1 JCR Q2
  11. 2021 The effect of barrier layers on 2D electron effective mass in Al0.3Ga0.7N/AlN/GaN heterostructures Journal of Physics: Condensed Matter DOI 10.1088/1361-648X/abf8d2 YÖKSİS SJR Q2 JCR Q3
  12. 2021 Determination of scattering mechanisms in AlInGaN/GaN heterostructures grown on sapphire substrate Journal of Alloys and Compounds DOI 10.1016/j.jallcom.2021.158895 YÖKSİS SJR Q1 JCR Q1
  13. 2021 Substrate effects on electrical parameters of Dirac fermions in graphene Materials Science in Semiconductor Processing DOI 10.1016/j.mssp.2021.105936 YÖKSİS SJR Q1 JCR Q2
  14. 2021 Effect of annealing process on hot-electron energy relaxation rates in n-type modulation-doped Ga0.68In0.32N0.017As/GaAs quantum wells via deformation potential and piezoelectric scatterings Physica E: Low-dimensional Systems and Nanostructures DOI 10.1016/j.physe.2020.114344 YÖKSİS SJR Q2 JCR Q2
  15. 2020 Power loss mechanisms in n-type modulation-doped AlGaAs/GaAsBi quantum well heterostructures Semiconductor Science and Technology DOI 10.1088/1361-6641/ab94d9 YÖKSİS SJR Q1 JCR Q3
  16. 2020 Electronic transport in n-type modulation-doped AlGaAs/GaAsBi quantum well structures: influence of Bi and thermal annealing on electron effective mass and electron mobility Semiconductor Science and Technology DOI 10.1088/1361-6641/ab5d8d YÖKSİS SJR Q1 JCR Q3
  17. 2017 Thermally activated flux mechanism in Mg-doped InN epitaxial film Philosophical Magazine DOI 10.1080/14786435.2017.1343960 YÖKSİS SJR Q2 JCR Q2
  18. 2016 Complementary and alternative technique for the determination of electron effective mass quantum Hall effect Optoelectronics and Advanced Materials-Rapid Communications DOI https://oam-rc.inoe.ro/ YÖKSİS SJR Q3 JCR Q4
  19. 2016 Power-loss mechanisms in surface passivated AlGaN/AlN/GaN heterojunctions 2015 11th Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR) DOI 10.1109/CLEOPR.2015.7376169 YÖKSİS
  20. 2016 Buffer effects on the mosaic structure of the HR-GaN grown on 6H-SiC substrate by MOCVD Journal of Materials Science: Materials in Electronics DOI 10.1007/s10854-016-5909-z YÖKSİS SJR Q2 JCR Q2

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