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Academician

ZEKİ YARAR

PROFESÖR

MERSİN ÜNİVERSİTESİ FEN FAKÜLTESİ FİZİK BÖLÜMÜ

  • Ana Dal Fen Bilimleri ve Matematik Temel Alanı
  • Yan Dal Fizik

A quick look at recorded outputs — details below.

  • Articles 21
  • Projects 0
  • Books 3
  • Proceedings 36
  • Patents 0
  • Artistic 0
Scopus (SJR) Q1 4 Q2 8 Q3 1 Q4 2
WoS (JCR) Q1 0 Q2 5 Q3 10 Q4 0
TR Index 0 articles

Field+year+type normalized OpenAlex percentiles — not Clarivate ESI / SciVal.

Top 1% articles 0
Top 10% articles 0
Avg percentile 57.4%
Top 1% share 0.0%
Top 10% share 0.0%

Articles

Articles with YÖKSİS and OpenAlex source split; narrow by quartile or TR Index.

Index filters

21 publications total

Scopus (SJR)
Q1 4 Q2 8 Q3 1 Q4 2
WoS (JCR)
Q1 0 Q2 5 Q3 10 Q4 0
TR Index
0 articles

Article list

  1. 2024 Mobility Characteristics of ZnMgO/ZnO Heterostructures with Screening Effects Physics of the Solid State DOI 10.1134/S1063783423600061 YÖKSİS SJR Q4 JCR Q3 OpenAlex 31.3%
  2. 2022 Screening effects on the mobility properties in AlGaN/GaN heterostructures with varied Al content International Journal of Modern Physics C DOI 10.1142/S0129183122501601 YÖKSİS SJR Q3 JCR Q2 OpenAlex 48.4%
  3. 2020 Electron transport properties of silicene: Intrinsic and dirty cases with screening effects Journal of Molecular Structure DOI 10.1016/j.molstruc.2019.126878 YÖKSİS SJR Q2 JCR Q3 OpenAlex 47.0%
  4. 2016 Transport Properties of Graphene and Suspended Graphene with EMC: The Role of Various Scattering Mechanisms Journal of Electronic Materials DOI 10.1007/s11664-016-4564-8 YÖKSİS SJR Q2 JCR Q3 OpenAlex 52.1%
  5. 2015 Electron Transport Properties of a ZnMgO ZnO Hetero Structure and the Effect of Interface Roughness and ZnMgO Thickness Journal of Electronic Materials DOI 10.1007/s11664-015-3776-7 YÖKSİS SJR Q2 JCR Q2 OpenAlex 70.3%
  6. 2015 A comparative study of transport properties of monolayer graphene and AlGaN GaN heterostructure AIP Advances DOI 10.1063/1.4926341 YÖKSİS SJR Q2 JCR Q3 OpenAlex 69.9%
  7. 2013 Effect of polarization and interface roughness on the transport properties of AlGaN GaN heterostructure Solid State Communications DOI 10.1016/j.ssc.2013.01.004 YÖKSİS SJR Q1 JCR Q3 OpenAlex 63.3%
  8. 2011 Steady State Electron Transport and Low Field Mobility of Wurtzite Bulk ZnO and Zn1 x Mg x O Journal of Electronic Materials DOI 10.1007/s11664-011-1516-1 YÖKSİS SJR Q1 JCR Q2 OpenAlex 67.9%
  9. 2008 Electron mobility in modulation doped AlGaN GaN and InGaN GaN quantum wells A comparative study Solid State Communications DOI 10.1016/j.ssc.2008.05.006 YÖKSİS SJR Q1 JCR Q2 OpenAlex 58.4%
  10. 2007 Transport and mobility properties of wurtzite InN and GaN physica status solidi (b) DOI 10.1002/pssb.200642433 YÖKSİS SJR Q2 JCR Q3 OpenAlex 57.1%
  11. 2006 Electron mobility in a modulation doped AlGaN GaN quantum well The European Physical Journal B DOI 10.1140/epjb/e2006-00092-2 YÖKSİS SJR Q1 JCR Q2 OpenAlex 67.5%
  12. 2005 Mobility of electrons in a AlGaN GaN QW Effect of temperature applied field surface roughness and well width physica status solidi (b) DOI 10.1002/pssb.200540093 YÖKSİS SJR Q2 JCR Q3 OpenAlex 75.2%
  13. 2024 Mobility Characteristics of ZnMgO/ZnO Heterostructures with Screening Effects Physics of the Solid State DOI 10.1134/S1063783423600061 YÖKSİS SJR Q4 JCR Q3 OpenAlex 31.3%
  14. 2017 EMBEDDED-IMPROVEMENT BASED ON EMBEDDEDCONSULTATION IN HE IN LINE WITH ENQA-ESG, QUALITY AND BPM STANDARDS The Online Journal of Quality in Higher Education YÖKSİS
  15. 2016 Transport Properties of Graphene and Suspended Graphene with EMC The Role of Various Scattering Mechanisms Journal of Electronic Materials DOI 10.1007/s11664-016-4564-8 YÖKSİS SJR Q2 JCR Q3 OpenAlex 52.1%
  16. 2015 A comparative study of transport properties of monolayer graphene and AlGaN GaN heterostructure AIP Advances DOI 10.1063/1.4926341 YÖKSİS SJR Q2 JCR Q3 OpenAlex 69.1%
  17. 2010 Electron Transport Charactersitics of Wurtzite Bulk ZnO And Zn1 x Mgx O Azerbaijan Journal of Physics YÖKSİS
  18. 2010 Alloy Scattering Dependence Of Electron Transport In Algan BALKAN PHYSICS LETTERS YÖKSİS
  19. 2010 Polarization Induced 2DEG at a AlGaN GaN Heterostructure and Its Transport Properties Azerbaijan Journal of Physics YÖKSİS
  20. 2007 Transport and Mobility Properties of Bulk Indium Nitride InN and a Two Dimensional Electron Gas in an InGaN GaN Quantum Well Journal of ELECTRONIC MATERIALS YÖKSİS

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