OpenAlex topic

Semiconductor materials and devices

This page lists works and academicians tagged with an OpenAlex topic. It is not a YÖKSİS primary or secondary field.

OpenAlex 3,352 works 138 author topics

Works

3,352 works

Equivalent circuit modeling and relaxation dynamics of Au/Ti/AlN/n-Si MOS structures 2026
Abstract This study presents a comprehensive impedance spectroscopy (IS) analysis of Au/Ti/AlN/n-Si metal–oxide semiconductor (MOS) structures, with the aim of elucidating their dielectric and interfacial properties under different bias and frequency conditions. The real ( $${Z}{\prime}$$ Z ′ ) and imaginary ( $${Z}^{…
- ADEM TATAROĞLU
Chemical Control of Space Charge Barriers and Grain Boundary Resistances in Polycrystalline Ionic Conductors 2026
ABSTRACT Grain boundaries (GBs) are unavoidable extended defects in polycrystalline materials that often lead to charge‐carrier blocking. Their presence, in turn, depresses device performance and/or accelerates degradation. Attempts to systematically identify the source or control these barriers remain scarce. Here, w…
In Situ Fluorine Doping of FZO Films by Atomic Layer Deposition 2026
Abstract In optoelectronic devices, fluorine-doped semiconductors have been used widely. Atomic layer deposition (ALD) is one of the main processes integrated into semiconductor manufacturing and a perfect candidate to obtain conformally covered films for complex geometries at low temperatures on a budget. Due to the…
Explainable XGBoost modelling of removal efficiency in PMS- and PDS-based advanced oxidation processes 2026
No abstract yet.
Structural, electrical and hydrogen sensing properties evaluation of fabricated PdO thin films by thermal oxidation 2026
No abstract yet.
Electron radiation-induced device degradation in commercial SiC Power MOSFETs 2026
No abstract yet.
Equivalent circuit modeling and relaxation dynamics of Au/Ti/AlN/n-Si MOS structures 2026
Abstract This study presents a comprehensive impedance spectroscopy (IS) analysis of Au/Ti/AlN/n-Si metal–oxide semiconductor (MOS) structures, with the aim of elucidating their dielectric and interfacial properties under different bias and frequency conditions. The real ( $${Z}{\prime}$$ Z ′ ) and imaginary ( $${Z}^{…
Electrical relaxation in Al2O3-based MIS Schottky structures: insights into interfacial polarization and hopping transport 2026
No abstract yet.
Defect Characterization and Gamma Radiation Response of Al/Yb2O3/SiO2/p-Si MOS Structures 2026
No abstract yet.
Analysis of the Behavior of Ag/Mg3N2/p-Si Schottky Diodes Based on Impedance and Dielectric Properties 2026
Abstract This study evaluates the effect of the Mg 3 N 2 interlayer on interface characteristics by investigating the electrical, impedance, and dielectric properties of Ag/Mg 3 N 2 /p-Si Schottky diodes. The study specifically aims to reveal the interface trap density ( N ss ), series resistance ( R s ), and frequenc…
Electrical, dielectric and interface-state characterization of Al-Doped ZrO₂/p-Si (MOS) structures by sol–gel dip-coating: the role of Al incorporation on barrier height, series resistance and trap passivation 2026
No abstract yet.
Electrical, Dielectric and Interface-State Characterization of Al-Doped ZrO₂/p-Si (MOS) Structures by Sol–Gel Dip-Coating: The Role of Al Incorporation on Barrier Height, Series Resistance and Trap Passivation 2026
No abstract yet.

Academicians

138 academicians