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Article detail · 2023

Illumination Response of Impedance Properties of Al/Gr-PVA/p-Si (MPS) Device

Journal

GU J Sci, Part A,

ISSN 2147-9542

YÖKSİS OpenAlex Open access · bronze TR Index Citations 1 Percentile 38.4% FWCI 0.14
Year
2023
Type
article

Data source split

  • YÖKSİS YÖKSİS article record
  • YÖKSİS venue GU J Sci, Part A,
  • OpenAlex OpenAlex enrichment (abstract, citations, topics)

Abstract

OpenAlex · English

Admittance measurements including capacitance (C) and conductance (G) of Al/Gr-PVA/p-Si (MPS) device were made at 500 kHz and under dark and 200 mW/cm2 conditions. The illumination response on the electric characteristics of the device was investigated using the C-2-V characteristics. It was observed that the electronic parameters of the device changed depending on the illumination conditions. The doping concentration, Fermi energy and barrier height were obtained using the C-2-V data. The surface state (Nss) was also obtained using capacitance data. The results show that the device can be used as a photocapacitor.

Topics

Citations

OpenAlex cited_by_count. Not a WoS or Scopus citation count; those sources have no separate column here.

1 citations

OpenAlex cited_by_count (cache / database)

1 publications in the local catalog that cite this work (OpenAlex reference match; not the full global list).

  1. On an investigation of optoelectrical features in Au/(MWCNT:PVA‑B(OH)3)/n‑Si structure, using I–V data, in dark and illumination conditions 2026 Citations 10 · OpenAlex

Authors

  1. DİLAN ATA
  2. MUZAFFER BALBAŞI GAZİ ÜNİVERSİTESİ
  3. ADEM TATAROĞLU