Article detail · 2013
A detailed comparative study on the main electrical parameters of Au n Si and Au PVA Zn n Si Schottky barrier diodes
YÖKSİS
OpenAlex
SJR Q2
JCR Q2
Citations 51
Percentile 76.1%
FWCI 1.14
- Year
- 2013
- Type
- article
Data source split
- YÖKSİS YÖKSİS article record
- YÖKSİS venue Materials Science in Semiconductor Processing
- Catalog match (ISSN) Materials Science in Semiconductor Processing
- OpenAlex OpenAlex enrichment (abstract, citations, topics)
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Citations
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51 citations
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62 publications in the local catalog that cite this work (OpenAlex reference match; not the full global list).
- Synthesis and characterization of pure and graphene (Gr)-doped organic/polymer nanocomposites to investigate the electrical and photoconductivity properties of Au/n-GaAs structures 2017
- Synthesis and characterization of pure and graphene Gr doped organic polymer nanocomposites to investigate the electrical and photoconductivity properties of Au n GaAs structures 2017
- Synthesis and characterization of pure and graphene (Gr)-doped organic/polymer nanocomposites to investigate the electrical and photoconductivity properties of Au/n-GaAs structures 2017
- The investigation of current-conduction mechanisms (CCMs) in Au/ (0.07Zn-PVA)/n-4H-SiC (MPS) Schottky diodes (SDs) by using ( I-V-T ) measurements 2018
- A comparison of electrical characteristics of Au/n-Si (MS) structures with PVC and (PVC: Sm2O3) polymer interlayer 2021
- Examination of dielectric response of Au/HgS-PVA/n-Si (MPS) structure by impedance spectroscopy method 2019
- A comparison of electrical parameters of Au/n-Si and Au/(CoSO4–PVP)/n-Si structures (SBDs) to determine the effect of (CoSO4–PVP) organic interlayer at room temperature 2019
- Examination of dielectric response of Au/HgS-PVA/n-Si (MPS) structure by impedance spectroscopy method 2019
- The comparative electrical characteristics of Au/n-Si (MS) diodes with and without a 2 graphene cobalt-doped Ca3Co4Ga0.001Ox interfacial layer at room temperature 2016
- Modification of Schottky barrier height using an inorganic compound interface layer for various contact metals in the metal/p-Si device structure 2021