Investigating the Impact of Growth Time and Methane Flow on Graphene Synthesis using Nickel Foil

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Graphene has been one of the most investigated nanomaterials in recent years due to its one atom thickness nature and its extraordinary properties such as high conductivity and excellent transmittance in visible range, bendability and high carrier mobility. Although there are many techniques to grow graphene, chemical vapor deposition technique is one of the best approach to synthesize homogeneous and commercial scale graphene in thin film form. Many parameters can affect the quality and homogeneity of the graphene film that is grown with this technique. In this study, two growth parameters which are methane flow rate and growth time were investigated to find out their effect on the quality of the graphene film, which is grown on nickel foil. Graphene film grown with different flow rates of methane (from 20 to 50 sccm) and growth time (50 to 20 mins.) were examined. We found that single layer graphene film could only be grown under 20 sccm methane flow in 20 mins. growth time as evidenced via Raman spectroscopy measurements. Furthermore, the single layer graphene film was found to be in high homogeneity as confirmed by Raman mapping. On the other hand, multi-layer graphene film was obtained by increasing both methane flow and growth time.