Article detail · 2014
Effects of RF Power on Electrical and Structural Properties of Sputtered SnO2 Sb Thin Films
- Year
- 2014
- Type
- article
Data source split
- YÖKSİS YÖKSİS article record
- YÖKSİS venue Acta Physica Polonica A
- Catalog match (ISSN) Acta Physica Polonica A
- OpenAlex OpenAlex enrichment (abstract, citations, topics)
Abstract
OpenAlex · English
In this work, antimony doped tin oxide (SnO2:Sb) thin lms were fabricated using a radio frequency magnetron sputtering system on Si wafer and glass substrates.The base pressure in the sputtering chamber was 1.0 Pa.The SnO2:Sb thin lms were deposited for 1.0 h in a mixture of Ar and O2 environment with O2/Ar ratio of 10/90 at 75, 100, and 125 W RF sputtering powers.The microstructure of SnO2:Sb thin lms was assessed using a eld emission scanning electron microscopy.The crystallographic structure of the sample was determined by X-ray diraction.The average surface roughness (Ra) was measured with atomic force microscopy.The electrical resistivity of the deposited lms was measured by the four-point-probe method.The thicknesses of the lms were measured by surface proler.
Topics
Citations
OpenAlex cited_by_count. Not a WoS or Scopus citation count; those sources have no separate column here.
2 citations
OpenAlex cited_by_count (cache / database)