Frequency Response of Metal\u2013Semiconductor Structures With Thin-Films Sapphire Interlayer by ALD Technique

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MIS-type Al/Al2O3/p-Si structures were fabricated to identify its admittance analysis through capacitance/conductance versus logarithmic frequency (${C} / {G}$–${V}$–${f}$) data in the 1 kHz–5 MHz and ±3 V ranges at room temperature. Admittance measurements determine the surface states (${N}_{\text{ss}}$) and these states occurred at M/S interlayer arise as a result of high capacitance and conductance values at low frequencies. This is also explained by adequacy of tracking ac signal by${N}_{\text{ss}}$at lower frequencies. In consequence with${N}_{\text{ss}}$presence, a peak turns up or becomes visible at the normalized parallel conductance versus logarithm of frequency [${G}_{\text{p}} / \omega -$ln(${f}$)] plot under various biases. In the energy range of ($0.17- {E}_{\text{v}}$)–($0.67- {E}_{\text{v}}$),${N}_{\text{ss}}$and their life/relaxation time ($\tau $) values vary from$4.95\times 10^{12}$to$7.42\times 10^{11}$eV$^{-1}\cdot \text{cm}^{-2}$and from$7.85\times 10^{-5}$to$1.05\times 10^{-6}$s, respectively.