Determination of some main parameters for quantum values of GaAlAs GaAs transmission mode photocathodes in near infrared region

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The values of the quantum yield, its spectral dependence, and the external quantum efficiency of GaAlAs/GaAs transmission-mode photocathodes used in image intensification systems are computed based on the parameters of the internal quantum efficiency, the diffusion length, and the normalized surface recombination velocity. The variations for these parameters obtained are shown on the three orthogonal axes. Possible explanations and further lines of the investigation are also discussed.