Article detail · 2025
Synthesis and Characterization of Cu2CoSnS4 (CCTS) Absorber Material for Renewable Energy Applications
International Journal of Innovative Engineering Applications
- Year
- 2025
- ISSN
2587-1943- Type
- article
Data source split
- YÖKSİS YÖKSİS article record
- OpenAlex OpenAlex enrichment (abstract, citations, topics)
Abstract
English (OpenAlex)
Presented report, Cu2CoSnS4 (CCTS) semiconductor was growth on glass substrate by using chemical routes. The physical properties of sample were qualified by using XRD Raman spectrometer, SEM with EDS, UV-Vis spectrometer and AFM. The XRD measurement confirmed that the CCTS has stannite crystal structure with a preferential orientation throughout the (112) direction. The Raman measurement verified the presence of characteristic peak which occurred at 320 cm-1 correspond A1 vibrational mode. The EDS spectrum with mapping revealed the existence of the elements ( S, Sn, Co, Cu) in compound and these elements homogeneously distrubuted on the surfaces of the sample. The combination of AFM and SEM characterization highlighted the structural integrity of the CCTS thin film. Optical absorbance analyses showed the band gap value of sample (~1.33 eV) was suitable for solar cell applications. Besides, ıt could be said that fabricated device n-ITO/p-CCTS/Ag was convenient to use in renewable energy applications. These findings open up the possibility to explore new generation materials which have abundant elements in earth crust without any dangerous and rare/costly elements such as selenium, gallium, and indium.
Topics
- Chalcogenide Semiconductor Thin Films
- Copper-based nanomaterials and applications
- Chemical and Physical Properties of Materials
Primary topic Chalcogenide Semiconductor Thin Films