Makale detayı · 2010
Polarization-engineered GaN/InGaN/GaN tunnel diodes
- Yıl
- 2010
- Tür
- article
Veri kaynağı ayrımı
- YÖKSİS YÖKSİS makale kaydı
- YÖKSİS dergi adı APPLIED PHYSICS LETTERS
- Katalog eşleşmesi (ISSN) Applied Physics Letters
- OpenAlex OpenAlex zenginleştirmesi (özet, atıf, konular)
Özet
OpenAlex · İngilizce
We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel–Kramers–Brillouin calculations were used to model and design tunnel junctions with narrow band gap InGaN-based barrier layers. N-polar p-GaN/In0.33Ga0.67N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient interband tunneling was achieved close to zero bias with a high current density of 118 A/cm2 at a reverse bias of 1 V, reaching a maximum current density up to 9.2 kA/cm2. These results represent the highest current density reported in III-nitride tunnel junctions and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.
Konular
Atıflar
OpenAlex cited_by_count. WoS veya Scopus atıf sayısı değildir; o kaynaklar için ayrı kolon yoktur.
153 atıf
OpenAlex cited_by_count (önbellek / veritabanı)
Yerel katalogda bu makaleye atıf yapan 8 yayın (OpenAlex referans eşleşmesi; tam dünya listesi değildir).
- Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes 2012
- Low resistance GaN/InGaN/GaN tunnel junctions 2013
- Tunneling-based carrier regeneration in cascaded GaN light emitting diodes to overcome efficiency droop 2013
- InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes 2014
- Tunnel-injected sub-260nm ultraviolet light emitting diodes 2017
- GaN-based three-junction cascaded light-emitting diode with low-resistance InGaN tunnel junctions 2015
- Low-resistance GaN tunnel homojunctions with 150 kA/cm(2) current and repeatable negative differential resistance 2016
- Ultralow-voltage-drop GaN/InGaN/GaN tunnel junctions with 12 indium content 2017