Makale detayı · 2017
Ultralow-voltage-drop GaN/InGaN/GaN tunnel junctions with 12 indium content
- Yıl
- 2017
- Tür
- article
Veri kaynağı ayrımı
- YÖKSİS YÖKSİS makale kaydı
- YÖKSİS dergi adı APPLIED PHYSICS EXPRESS
- Katalog eşleşmesi (ISSN) Applied Physics Express
- OpenAlex OpenAlex zenginleştirmesi (özet, atıf, konular)
Özet
OpenAlex · İngilizce
We report a combination of highly doped layers and polarization engineering that achieves highly efficient blue-transparent GaN/InGaN/GaN tunnel junctions (In content = 12%). NPN diode structures with a low voltage drop of 4.04 V at 5 kA/cm 2 and a differential resistance of 6.51 × 10 −5 Ω·cm 2 at 3 kA/cm 2 were obtained. The tunnel junction design with n ++ -GaN (Si: 5 × 10 20 cm −3 )/3 nm p ++ -In 0.12 Ga 0.88 N (Mg: 1.5 × 10 20 cm −3 )/p ++ -GaN (Mg: 5 × 10 20 cm −3 ) showed the best device performance. Device simulations agree well with the experimentally determined optimal design. The combination of low In composition and high doping can facilitate lower tunneling resistance for blue-transparent light-emitting diodes.
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Atıflar
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