Article detail · 2013
Probing the Bonding and Electronic Structure of Single Atom Dopants in Graphene with Electron Energy Loss Spectroscopy
- Year
- 2013
- Type
- article
Data source split
- YÖKSİS YÖKSİS article record
- YÖKSİS venue Nano Letters
- Catalog match (ISSN) Nano Letters
- OpenAlex OpenAlex enrichment (abstract, citations, topics)
Abstract
OpenAlex · English
A combination of scanning transmission electron microscopy, electron energy loss spectroscopy, and ab initio calculations reveal striking electronic structure differences between two distinct single substitutional Si defect geometries in graphene. Optimised acquisition conditions allow for exceptional signal-to-noise levels in the spectroscopic data. The near-edge fine structure can be compared with great accuracy to simulations and reveal either an sp(3)-like configuration for a trivalent Si or a more complicated hybridized structure for a tetravalent Si impurity.
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Citations
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221 citations
OpenAlex cited_by_count (cache / database)
6 publications in the local catalog that cite this work (OpenAlex reference match; not the full global list).
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- Electronic functionalisation of graphene via external doping and dosing 2015