Article detail · 2013
Current Transport Mechanisms in the AlInN AlN GaN single channel and AlInN AlN GaN AlN GaN double channel heterostructures
YÖKSİS
OpenAlex
SJR Q1
JCR Q2
Citations 6
Percentile 58.5%
FWCI 0.25
- Year
- 2013
- ISSN
0040-6090- Type
- article
Data source split
- YÖKSİS YÖKSİS article record
- OpenAlex OpenAlex enrichment (abstract, citations, topics)
Abstract
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Topics
- GaN-based semiconductor devices and materials
- Semiconductor materials and devices
- Semiconductor materials and interfaces
Primary topic GaN-based semiconductor devices and materials