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Article detail · 2017

Electrical and Dielectric Properties of a n-Si Schottky Barrier Diode with Bismuth Titanate Interlayer: Effect of Temperature

Journal

Journal of Electronic Materials

ISSN 0361-5235

YÖKSİS OpenAlex Open access · green SJR Q2 JCR Q3 Citations 11 Percentile 68.8% FWCI 0.75
Year
2017
Type
article

Data source split

  • YÖKSİS YÖKSİS article record
  • YÖKSİS venue Journal of Electronic Materials
  • Catalog match (ISSN) Journal of Electronic Materials
  • OpenAlex OpenAlex enrichment (abstract, citations, topics)

Abstract

No OpenAlex abstract is available for this article yet.

Topics

  • Semiconductor materials and interfaces
  • Dielectric properties of ceramics
  • Silicon Nanostructures and Photoluminescence

Primary topic Semiconductor materials and interfaces

Authors

  1. MERT YILDIRIM DÜZCE ÜNİVERSİTESİ
  2. Canan ŞAHİN
  3. ŞEMSETTİN ALTINDAL
  4. PERİHAN DURMUŞ GAZİ ÜNİVERSİTESİ