Makale detayı · 2020
Mott barrier behavior of metal–TlGaSe2 layered semiconductor junction
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Yıl
- 2020
- ISSN
0268-1242- Tür
- article
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Özet
İngilizce (OpenAlex)
Abstract We report on the characteristics of metal- p -type high resistance TlGaSe 2 semiconductor junction barrier fabricated by deposition of indium and gold metals. The electrical properties of /TlGaSe 2 / semiconductor contacts were monitored as a function of temperature in the range of ∼80–300 K using current–voltage ( I − V ) and capacitance–voltage ( C − V ) measurements. Device characteristics of I n /TlGaSe 2 / A u showed rectification properties. From forward bias I − V characteristics it was revealed that the increase of current is slower than the predictions by Schottky barrier theory. The rectification properties of I n /TlGaSe 2 / A u semiconductor device were simulated by the Mott barrier model where the presence of an undoped layer on the semiconductor surface is assumed, and measurements and computational simulation agreed on the validity of this model. C − V measurements showed that at higher temperatures I n /TlGaSe 2 / A u barrier showed a capacitance from accumulation toward depletion mode, whereas at low temperatures the barrier capacitance degradation was found. The observed C − V of I n /TlGaSe 2 / A u does not significantly change over the entire bias range ± 30 V, confirming that the I n /TlGaSe 2 / A u is fully depleted, thus the structures are Mott barrier. First-principles electronic band diagram calculations showed that introduction of S e -atom vacancies in the various sites of TlGaSe 2 unit cell greatly affects the electronic band structure of this semiconductor in an increasing manner in band gaps with respect to stoichiometric compound. Consequently, the S
Konular
- Solid-state spectroscopy and crystallography
- Semiconductor materials and interfaces
- Perovskite Materials and Applications
Birincil konu Solid-state spectroscopy and crystallography