Akademisyen

SERDAR GÖREN

ARAŞTIRMA GÖREVLİSİ

GEBZE TEKNİK ÜNİVERSİTESİ TEMEL BİLİMLER FAKÜLTESİ FİZİK BÖLÜMÜ

Ana Dal Fen Bilimleri ve Matematik Temel Alanı
Yan Dal Fizik

Kayıtlı çıktılara kısa bakış — ayrıntılar aşağıda.

Makale 8
Proje 0
Kitap 0
Bildiri 0
Patent 0
Sanatsal 0

Scopus (SJR) Q1 4 Q2 4 Q3 0 Q4 0

WoS (JCR) Q1 2 Q2 2 Q3 4 Q4 0

TR Index 0 makale

Alan+yıl+tür normalize OpenAlex yüzdelik — Clarivate ESI / SciVal değildir.

Üst %1 makale 0

Üst %10 makale 0

Ort. yüzdelik 47.0%

Üst %1 payı 0.0%

Üst %10 payı 0.0%

Makaleler

YÖKSİS ve OpenAlex kaynak ayrımıyla makaleler; quartile ve TR Index ile daraltabilirsiniz.

Makale listesi

2024 The Franz–Keldysh effect in the optical absorption spectrum of a TlGaSe2 layered semiconductor caused by charged native defects Semiconductor Science and Technology DOI 10.1088/1361-6641/ad255b YÖKSİS SJR Q2 JCR Q3 OpenAlex 35.8%
2024 Manganese diluted TlInS2 layered semiconductor: Optical, electronic and magnetic properties Journal of Alloys and Compounds DOI 10.1016/j.jallcom.2024.176898 YÖKSİS SJR Q1 JCR Q1 OpenAlex 61.2%
2023 Modification of the optical and elastic properties of TlGaSe2 layered semiconductor produced by the memory effect IOP Publishing DOI 10.1088/1402-4896/ad0082 YÖKSİS SJR Q2 JCR Q2 OpenAlex 29.3%
2020 Mott barrier behavior of metal–TlGaSe2 layered semiconductor junction SEMICONDUCTOR SCIENCE AND TECHNOLOGY DOI 10.1088/1361-6641/abbaac YÖKSİS SJR Q1 JCR Q3 OpenAlex 61.7%
2024 Manganese diluted TlInS2 layered semiconductor: Optical, electronic and magnetic properties Journal of Alloys and Compounds DOI 10.1016/j.jallcom.2024.176898 YÖKSİS SJR Q1 JCR Q1 OpenAlex 61.2%
2024 The Franz–Keldysh effect in the optical absorption spectrum of a TlGaSe2 layered semiconductor caused by charged native defects Semiconductor Science and Technology DOI 10.1088/1361-6641/ad255b YÖKSİS SJR Q2 JCR Q3 OpenAlex 35.8%
2023 Modification of the optical and elastic properties of TlGaSe2 layered semiconductor produced by the memory effect Physica Scripta DOI 10.1088/1402-4896/ad0082 YÖKSİS SJR Q2 JCR Q2 OpenAlex 29.3%
2020 Mott barrier behavior of metal–TlGaSe2 layered semiconductor junction Semiconductor Science and Technology DOI 10.1088/1361-6641/abbaac YÖKSİS SJR Q1 JCR Q3 OpenAlex 61.7%

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