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Akademisyen

YASİN ŞALE

ARAŞTIRMA GÖREVLİSİ

GEBZE TEKNİK ÜNİVERSİTESİ TEMEL BİLİMLER FAKÜLTESİ FİZİK BÖLÜMÜ

  • Ana Dal Fen Bilimleri ve Matematik Temel Alanı
  • Yan Dal Fizik

Kayıtlı çıktılara kısa bakış — ayrıntılar aşağıda.

  • Makale 28
  • Proje 0
  • Kitap 0
  • Bildiri 5
  • Patent 0
  • Sanatsal 0
Scopus (SJR) Q1 13 Q2 6 Q3 5 Q4 0
WoS (JCR) Q1 5 Q2 10 Q3 6 Q4 3
TR Index 0 makale

Alan+yıl+tür normalize OpenAlex yüzdelik — Clarivate ESI / SciVal değildir.

Üst %1 makale 0
Üst %10 makale 0
Ort. yüzdelik 48.8%
Üst %1 payı 0.0%
Üst %10 payı 0.0%

Makaleler

YÖKSİS ve OpenAlex kaynak ayrımıyla makaleler; quartile ve TR Index ile daraltabilirsiniz.

Dizin filtreleri

Toplam 28 yayın

Scopus (SJR)
Q1 13 Q2 6 Q3 5 Q4 0
WoS (JCR)
Q1 5 Q2 10 Q3 6 Q4 3
TR Index
0 makale

Makale listesi

  1. 2024 The Franz–Keldysh effect in the optical absorption spectrum of a TlGaSe2 layered semiconductor caused by charged native defects Semiconductor Science and Technology DOI 10.1088/1361-6641/ad255b YÖKSİS SJR Q2 JCR Q3 OpenAlex 35.8%
  2. 2024 Manganese diluted TlInS2 layered semiconductor: Optical, electronic and magnetic properties Journal of Alloys and Compounds DOI 10.1016/j.jallcom.2024.176898 YÖKSİS SJR Q1 JCR Q1 OpenAlex 61.2%
  3. 2023 Modification of the optical and elastic properties of TlGaSe2 layered semiconductor produced by the memory effect PHYSICA SCRIPTA DOI 10.1088/1402-4896/ad0082 YÖKSİS SJR Q2 JCR Q2 OpenAlex 29.3%
  4. 2020 Mott barrier behavior of metal–TlGaSe2 layered semiconductor junction SEMICONDUCTOR SCIENCE AND TECHNOLOGY DOI 10.1088/1361-6641/abbaac YÖKSİS SJR Q1 JCR Q3 OpenAlex 61.7%
  5. 2018 Origin of the optical absorption of TlGaSe2 layered semiconductor in the visible range Semiconductor Science and Technology DOI 10.1088/1361-6641/aac97b YÖKSİS SJR Q1 JCR Q2 OpenAlex 54.4%
  6. 2018 Diode Polarization and Resistive Switching in Metal/TlGaSe2 Semiconductor/Metal Devices Semiconductors DOI 10.1134/S1063782618160273 YÖKSİS SJR Q3 JCR Q4 OpenAlex 54.6%
  7. 2016 Defects forming the optical absorption edge in TlGaSe2 layered crystal Journal of Physics and Chemistry of Solids DOI 10.1016/j.jpcs.2016.04.009 YÖKSİS SJR Q2 JCR Q2 OpenAlex 61.6%
  8. 2015 Manifestation of the Memory Effect in Photovoltaic Properties of TlGaSe2 Ferroelectric Semiconductor Ferroelectrics DOI 10.1080/00150193.2015.1049505 YÖKSİS SJR Q3 JCR Q4 OpenAlex 42.6%
  9. 2015 Enhancing the photoresponse of a TlGaSe2semiconductor for ultraviolet detection applications Physica Scripta DOI 10.1088/0031-8949/90/1/015805 YÖKSİS SJR Q3 JCR Q3 OpenAlex 60.0%
  10. 2014 Switching phenomenon in TlGaSe2 layered semiconductor Solid-State Electronics DOI 10.1016/j.sse.2014.02.001 YÖKSİS SJR Q1 JCR Q2 OpenAlex 63.8%
  11. 2014 Field induced rectification and memristive behavior of TlGaSe2 layered semiconductor Applied Physics Letters DOI 10.1063/1.4898590 YÖKSİS SJR Q1 JCR Q1 OpenAlex 5.8%
  12. 2014 Preillumination Induced change of electronic transport properties of TlGaSe2 semiconductor Solid State Sciences DOI 10.1016/j.solidstatesciences.2014.04.009 YÖKSİS SJR Q2 JCR Q2 OpenAlex 46.0%
  13. 2014 Enhanced excitonic photoconductivity due to built in internal electric field in TlGaSe2 layered semiconductor Journal of Applied Physics DOI 10.1063/1.4903051 YÖKSİS SJR Q1 JCR Q2 OpenAlex 5.8%
  14. 2013 Imprint electric field controlled electronic transport in TlGaSe2 crystals JOURNAL OF APPLIED PHYSICS DOI 10.1063/1.4819396 YÖKSİS SJR Q1 JCR Q2 OpenAlex 76.2%
  15. 2012 Unusual Urbach tail in TlGaSe2 ferroelectric semiconductor with incommensurate phase Journal of Applied Physics DOI 10.1063/1.4765736 YÖKSİS SJR Q1 JCR Q1 OpenAlex 76.2%
  16. 2025 Manganese diluted TlInS2 layered semiconductor: Optical, electronic and magnetic properties JOURNAL OF ALLOYS AND COMPOUNDS DOI 10.1016/j.jallcom.2024.176898 YÖKSİS SJR Q1 JCR Q1 OpenAlex 61.2%
  17. 2024 The Franz-Keldysh effect in the optical absorption spectrum of a TlGaSe2 layered semiconductor caused by charged native defects SEMICONDUCTOR SCIENCE AND TECHNOLOGY DOI 10.1088/1361-6641/ad255b YÖKSİS SJR Q2 JCR Q3 OpenAlex 35.8%
  18. 2020 Mott barrier behavior of metal-TlGaSe2 layered semiconductor junction SEMICONDUCTOR SCIENCE AND TECHNOLOGY DOI 10.1088/1361-6641/abbaac YÖKSİS SJR Q1 JCR Q3 OpenAlex 61.7%
  19. 2017 Metal - TlGaSe2 semiconductor – metal structure as memristive system Azerbaijan Journal of Physics YÖKSİS
  20. 2016 Defects forming the optical absorption edge in TlGaSe2 layered crystal Journal of Physics and Chemistry of Solids YÖKSİS

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