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Akademisyen

AHMET KAYMAZ

DOÇENT

BOLU ABANT İZZET BAYSAL ÜNİVERSİTESİ MÜHENDİSLİK FAKÜLTESİ ELEKTRİK-ELEKTRONİK MÜHENDİSLİĞİ BÖLÜMÜ

  • Ana Dal Mühendislik Temel Alanı
  • Yan Dal Elektrik-Elektronik ve Haberleşme Mühendisliği

Kayıtlı çıktılara kısa bakış — ayrıntılar aşağıda.

  • Makale 22
  • Proje 0
  • Kitap 0
  • Bildiri 5
  • Patent 0
  • Sanatsal 0
Scopus (SJR) Q1 9 Q2 9 Q3 2 Q4 0
WoS (JCR) Q1 5 Q2 9 Q3 3 Q4 3
TR Index 2 makale

Alan+yıl+tür normalize OpenAlex yüzdelik — Clarivate ESI / SciVal değildir.

Üst %1 makale 0
Üst %10 makale 5
Ort. yüzdelik 78.1%
Üst %1 payı 0.0%
Üst %10 payı 22.7%

Makaleler

YÖKSİS ve OpenAlex kaynak ayrımıyla makaleler; quartile ve TR Index ile daraltabilirsiniz.

Dizin filtreleri

Toplam 22 yayın

Scopus (SJR)
Q1 9 Q2 9 Q3 2 Q4 0
WoS (JCR)
Q1 5 Q2 9 Q3 3 Q4 3
TR Index
2 makale

Makale listesi

  1. 2026 The role of Cu-doping in DLC interlayers on the electrical parameters of MIS-type Schottky devices: A Capacitance-Conductance analysis Applied Surface Science DOI 10.1016/j.apsusc.2026.166805 YÖKSİS SJR Q1 JCR Q1 OpenAlex 86.0%
  2. 2026 The behaviour of ultra-high temperature sensitivity and multi-gaussian barrier shape for RGO/PVA-doped CF-based Schottky device Electrochimica Acta DOI 10.1016/j.electacta.2025.148095 YÖKSİS SJR Q1 JCR Q2 OpenAlex 79.8%
  3. 2026 Enhanced photoresponse of the AgZnO-doped PVA interfaced Schottky photodiodes under variable illumination Optical Materials DOI 10.1016/j.optmat.2026.118345 YÖKSİS SJR Q1 JCR Q2 OpenAlex 62.4%
  4. 2026 Comprehensive dielectric analysis of Schottky devices with Cu-doped DLC interlayer: Temperature effects and polarization mechanisms Materials Science and Engineering: B DOI 10.1016/j.mseb.2026.119238 YÖKSİS SJR Q1 JCR Q2 OpenAlex üst %10 OpenAlex 91.5%
  5. 2025 Comparison of electrical properties of pure and copper‑doped diamond‑like carbon interfacial‑layered Schottky devices under different temperature conditions Journal of Materials Science: Materials in Electronics DOI 10.1007/s10854-025-14360-7 YÖKSİS SJR Q2 JCR Q2 OpenAlex 89.4%
  6. 2025 Negative capacitance and negative dielectric behavior of MIS device with Rhenium-Type Schottky contacts Solid-State Electronics DOI 10.1016/j.sse.2025.109204 YÖKSİS SJR Q3 JCR Q4 OpenAlex 83.7%
  7. 2025 Dielectric properties and polarization mechanisms of the DLC-interlayered Schottky structures under low-moderate and high-temperatures Materials Science and Engineering: B DOI 10.1016/j.mseb.2025.118406 YÖKSİS SJR Q1 JCR Q2 OpenAlex üst %10 OpenAlex 95.1%
  8. 2024 Multi-Gaussian distribution of barrier height in diamond-like carbon interfacial-layered Schottky devices Materials Science in Semiconductor Processing DOI 10.1016/j.mssp.2024.108380 YÖKSİS SJR Q1 JCR Q2 OpenAlex 88.9%
  9. 2024 Overview of the irradiation-dependent behaviour of the negative dielectric properties of GaAs-based MIS devices Radiation Physics and Chemistry DOI 10.1016/j.radphyschem.2024.111877 YÖKSİS SJR Q2 JCR Q1 OpenAlex 85.5%
  10. 2024 The Role of Co/Zn-Doped Organic Interlayer on the Operating Performance of Schottky Devices as an Ionizing Radiation Sensor IEEE Sensors Journal DOI 10.1109/JSEN.2024.3387738 YÖKSİS SJR Q1 JCR Q1 OpenAlex 77.3%
  11. 2024 Identification of the Operating Modes in Single-Phase DC Drives Balkan Journal of Electrical and Computer Engineering DOI 10.17694/bajece.1475619 YÖKSİS TR Index OpenAlex 0.3%
  12. 2023 Determination of temperature sensitivity and current-transport mechanisms of the GaAs-based MS contact Materials Today Communications DOI 10.1016/j.mtcomm.2023.106380 YÖKSİS SJR Q2 JCR Q2 OpenAlex üst %10 OpenAlex 92.7%
  13. 2023 Negative Capacitance Phenomenon in GaAs-Based MIS Devices Under Ionizing Radiation Balkan Journal of Electrical and Computer Engineering DOI 10.17694/bajece.1210121 YÖKSİS TR Index OpenAlex 46.0%
  14. 2022 Ionizing radiation response of bismuth titanate-based metal-ferroelectric-semiconductor (MFS) type capacitor Microelectronics Reliability DOI 10.1016/j.microrel.2022.114546 YÖKSİS SJR Q2 JCR Q4 OpenAlex 63.9%
  15. 2021 Evaluation of gamma-irradiation effects on the electrical properties of Al/(ZnO-PVA)/p-Si type Schottky diodes using current-voltage measurements Radiation Physics and Chemistry DOI 10.1016/j.radphyschem.2021.109430 YÖKSİS SJR Q2 JCR Q1 OpenAlex üst %10 OpenAlex 96.0%
  16. 2020 Investigation of gamma-irradiation effects on electrical characteristics of Al/(ZnO–PVA)/p-Si Schottky diodes using capacitance and conductance measurements Journal of Materials Science: Materials in Electronics DOI 10.1007/s10854-020-03370-2 YÖKSİS SJR Q2 JCR Q3 OpenAlex 82.6%
  17. 2020 On the Multi-parallel Diodes Model in Au/PVA/n-GaAs Schottky Diodes and Investigation of Conduction Mechanisms (CMs) in a Temperature Range of 80–360 K Journal of Electronic Materials DOI 10.1007/s11664-020-08473-4 YÖKSİS SJR Q2 JCR Q3 OpenAlex 78.6%
  18. 2026 The role of Cu-doping in DLC interlayers on the electrical parameters of MIS-type Schottky devices: A Capacitance-Conductance analysis Applied Surface Science DOI 10.1016/j.apsusc.2026.166805 YÖKSİS SJR Q1 JCR Q1 OpenAlex 86.0%
  19. 2025 Negative capacitance and negative dielectric behavior of MIS device with Rhenium-Type Schottky contacts Solid-State Electronics DOI 10.1016/j.sse.2025.109204 YÖKSİS SJR Q3 JCR Q4 OpenAlex 83.7%
  20. 2025 Dielectric properties and polarization mechanisms of the DLC-interlayered Schottky structures under low-moderate and high-temperatures Materials Science and Engineering: B DOI 10.1016/j.mseb.2025.118406 YÖKSİS SJR Q1 JCR Q2 OpenAlex üst %10 OpenAlex 95.1%

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