Article detail · 2019
Temperature dependent current transport mechanism in osmium-doped perovskite yttrium manganite-based heterojunctions
- Year
- 2019
- Type
- article
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- YÖKSİS YÖKSİS article record
- YÖKSİS venue Journal of Applied Physics
- Catalog match (ISSN) Journal of Applied Physics
- OpenAlex OpenAlex enrichment (abstract, citations, topics)
Abstract
OpenAlex · English
Among the multiferroics, yttrium manganite YMnO3 (YMO) is one of the most frequently studied magnetic ferroelectric oxides and has attracted a great deal of concern, thanks to its potential magnetoelectric features. Furthermore, it has been reported in the literature that yttrium manganite is a useful interface material in thin film devices. It has been documented that the dopant into Y and/or Mn site(s) plays significant roles on the electrical and magnetic properties of YMO. The YMn0.95Os0.05O3 (YMOO) oxide powders were prepared by the well-known solid-state reaction technique. The YMOO thin films were deposited on the p-Si (100) substrate via a radio frequency sputtering method with a thickness of approximately 62 nm. The oxidation states of the constituted elements have been investigated by using the X-ray photoelectron spectroscopy method. Furthermore, the surface features of the obtained thin film have been investigated using a scanning electron microscope measurement. The I–V measurements were performed in the 50–310 K range, and consequently, the Schottky diodelike reverse and forward bias I–V characteristics were observed in the Al/YMOO/p-Si heterojunction. Moreover, the ideality factor and the barrier height values were calculated as 0.77 and 2.23 at room temperature, respectively.
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Citations
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25 citations
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23 publications in the local catalog that cite this work (OpenAlex reference match; not the full global list).
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