Article detail · 2004 · article
Differential Charging in SiO2 Si System As Determined by XPS
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- YÖKSİSYÖKSİS article record
- YÖKSİS venueThe Journal of Physical Chemistry B
- Catalog match (ISSN)Journal of Physical Chemistry B
- OpenAlexOpenAlex enrichment (abstract, citations, topics)
- Semantic Scholarcitation count (not merged with OpenAlex)
Abstract
The Si2p binding and the Si KLL kinetic energy difference between the SiO 2 layer and Si substrate is shown to be influenced by application of external voltage bias to the sample holder due to the differential charging as was already reported earlier (Ulgut, B.; Suzer, S. J. Phys. Chem. B 2003, 107, 2939). The cause of this bias induced (physical)-shift is now proven to be mostly due to partial neutralization by the stray electrons within the vacuum system by (i) introducing additional stray electrons via a filament and following their influence on the measured binding energy as a function of the applied voltage, (ii) measuring the Auger parameter. It is also shown that citrate-capped gold nanoclusters deposited on the SiO 2 /Si system experience differential charging similar to that of the oxide layer rather than the silicon substrate.
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Citations
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67citationsOpenAlex · cited_by_count (cache / database)
25 publications in the local catalog that cite this work (OpenAlex reference match; not the full global list).
- 2005 XPS Characterization of Au (Core)/SiO2 (Shell) NanoparticlesCitations 103 · OpenAlex
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- 2005 X ray Induced Production of Gold Nanoparticles on a SiO Si System and in a Poly methyl methacrylate MatrixCitations 73 · OpenAlex
- 2004 Time Resolved XPS Analysis of the SiO Si System in the Millisecond RangeCitations 42 · OpenAlex
- 2005 Enhanced peak separation in XPS with external biasingCitations 39 · OpenAlex
- 2010 XPS measurements for probing dynamics of chargingCitations 33 · OpenAlex
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