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Akademisyen

ŞÜKRÜ ARDALI

DOKTOR ÖĞRETİM ÜYESİ

ESKİŞEHİR TEKNİK ÜNİVERSİTESİ PORSUK MESLEK YÜKSEKOKULU ELEKTRİK VE ENERJİ BÖLÜMÜ

  • Ana Dal Fen Bilimleri ve Matematik Temel Alanı
  • Yan Dal Fizik

Kayıtlı çıktılara kısa bakış — ayrıntılar aşağıda.

  • Makale 40
  • Proje 0
  • Kitap 2
  • Bildiri 3
  • Patent 0
  • Sanatsal 0
Scopus (SJR) Q1 17 Q2 17 Q3 9 Q4 0
WoS (JCR) Q1 7 Q2 13 Q3 15 Q4 1
TR Index 0 makale

Alan+yıl+tür normalize OpenAlex yüzdelik — Clarivate ESI / SciVal değildir.

Üst %1 makale 1
Üst %10 makale 2
Ort. yüzdelik 55.7%
Üst %1 payı 2.5%
Üst %10 payı 5.0%

Makaleler

YÖKSİS ve OpenAlex kaynak ayrımıyla makaleler; quartile ve TR Index ile daraltabilirsiniz.

Dizin filtreleri

Toplam 40 yayın

Scopus (SJR)
Q1 17 Q2 17 Q3 9 Q4 0
WoS (JCR)
Q1 7 Q2 13 Q3 15 Q4 1
TR Index
0 makale

Makale listesi

  1. 2026 Temperature controlled phase transition and characterization of Cu2O and CuO thin films grown at different growth temperatures via mist CVD Applied Physics A DOI 10.1007/s00339-026-09555-6 YÖKSİS SJR Q2 JCR Q2 OpenAlex üst %1 OpenAlex 99.0%
  2. 2025 Design and realization of XOR, OR, and NAND light logic gates using GaAs heterostructure Applied Physics A DOI 10.1007/s00339-024-08213-z YÖKSİS SJR Q2 JCR Q2 OpenAlex 58.6%
  3. 2024 Light Logic Gates with GaAs‐Based Structures physica status solidi (RRL) – Rapid Research Letters DOI 10.1002/pssr.202400173 YÖKSİS SJR Q2 JCR Q3 OpenAlex 4.8%
  4. 2024 Light Logic Gates with GaAs‐Based Structures physica status solidi (RRL) – Rapid Research Letters DOI 10.1002/pssr.202470023 YÖKSİS SJR Q2 JCR Q3 OpenAlex 7.3%
  5. 2024 The comprehensive investigation of barrier layers on power loss mechanisms in AlGaN/GaN HEMT structures Materials Science and Engineering: B DOI 10.1016/j.mseb.2023.117075 YÖKSİS SJR Q1 JCR Q2 OpenAlex 68.1%
  6. 2022 The investigation of photoluminescence properties in InxGa1-xN/GaN multiple quantum wells structures with varying well number Physica B: Condensed Matter DOI 10.1016/j.physb.2022.413703 YÖKSİS SJR Q2 JCR Q3 OpenAlex 62.4%
  7. 2021 Integer quantum Hall effect measurement analysis in Ga0.68In0.32N0.017As/GaAs quantum wells with various annealing time Physica B: Condensed Matter DOI 10.1016/j.physb.2021.413305 YÖKSİS SJR Q2 JCR Q3 OpenAlex 62.7%
  8. 2021 The effect of passivation layer, doping and spacer layer on electron- longitudinal optical phonon momentum relaxation time in Al0.3Ga0.7N/AlN/GaN heterostructures Materials Science in Semiconductor Processing DOI 10.1016/j.mssp.2020.105449 YÖKSİS SJR Q1 JCR Q2 OpenAlex 78.0%
  9. 2021 The effect of barrier layers on 2D electron effective mass in Al0.3Ga0.7N/AlN/GaN heterostructures Journal of Physics: Condensed Matter DOI 10.1088/1361-648X/abf8d2 YÖKSİS SJR Q2 JCR Q3 OpenAlex 67.9%
  10. 2021 Determination of scattering mechanisms in AlInGaN/GaN heterostructures grown on sapphire substrate Journal of Alloys and Compounds DOI 10.1016/j.jallcom.2021.158895 YÖKSİS SJR Q1 JCR Q1 OpenAlex 82.1%
  11. 2021 Effect of annealing process on hot-electron energy relaxation rates in n-type modulation-doped Ga0.68In0.32N0.017As/GaAs quantum wells via deformation potential and piezoelectric scatterings Physica E: Low-dimensional Systems and Nanostructures DOI 10.1016/j.physe.2020.114344 YÖKSİS SJR Q2 JCR Q2 OpenAlex 56.5%
  12. 2021 Substrate effects on electrical parameters of Dirac fermions in graphene Materials Science in Semiconductor Processing DOI 10.1016/j.mssp.2021.105936 YÖKSİS SJR Q1 JCR Q2 OpenAlex 3.6%
  13. 2020 Power loss mechanisms in n-type modulation-doped AlGaAs/GaAsBi quantum well heterostructures Semiconductor Science and Technology DOI 10.1088/1361-6641/ab94d9 YÖKSİS SJR Q1 JCR Q3 OpenAlex 63.4%
  14. 2020 Electronic transport in n-type modulation-doped AlGaAs/GaAsBi quantum well structures: influence of Bi and thermal annealing on electron effective mass and electron mobility Semiconductor Science and Technology DOI 10.1088/1361-6641/ab5d8d YÖKSİS SJR Q1 JCR Q3 OpenAlex 74.5%
  15. 2017 The transport properties of Dirac fermions in chemical vapour-deposited single-layer graphene PHILOSOPHICAL MAGAZINE DOI 10.1080/14786435.2016.1247994 YÖKSİS SJR Q2 JCR Q2 OpenAlex 62.7%
  16. 2016 Power-loss mechanisms in surface passivated AlGaN/AlN/GaN heterojunctions 2015 11th Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR) DOI 10.1109/CLEOPR.2015.7376169 YÖKSİS OpenAlex 19.2%
  17. 2016 Energy relaxation of hot electrons by LO phonon emission in AlGaN/AlN/GaN heterostructure with in situ Si3N4 passivation Journal of Alloys and Compounds DOI 10.1016/j.jallcom.2015.11.056 YÖKSİS SJR Q1 JCR Q1 OpenAlex 58.3%
  18. 2016 Scattering analysis of 2DEG mobility in undoped and doped AlGaN/AlN/GaN heterostructures with an in situ Si3N4 passivation layer SOLID-STATE ELECTRONICS DOI 10.1016/j.sse.2016.01.006 YÖKSİS SJR Q2 JCR Q3 OpenAlex 63.9%
  19. 2015 The variation of temperature-dependent carrier concentration and mobility in AlGaN/AlN/GaN heterostructure with SiN passivation PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS DOI 10.1002/pssb.201552135 YÖKSİS SJR Q2 JCR Q3 OpenAlex 79.7%
  20. 2014 SiC Substrate Effects on Electron Transport in the Epitaxial Graphene Layer ELECTRONIC MATERIALS LETTERS DOI 10.1007/s13391-013-3159-2 YÖKSİS SJR Q2 JCR Q2 OpenAlex 60.3%

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