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ALİ TEKE

PROFESÖR

BALIKESİR ÜNİVERSİTESİ FEN-EDEBİYAT FAKÜLTESİ FİZİK BÖLÜMÜ

  • Ana Dal Fen Bilimleri ve Matematik Temel Alanı
  • Yan Dal Fizik

Kayıtlı çıktılara kısa bakış — ayrıntılar aşağıda.

  • Makale 39
  • Proje 0
  • Kitap 0
  • Bildiri 0
  • Patent 0
  • Sanatsal 0
Scopus (SJR) Q1 19 Q2 6 Q3 3 Q4 3
WoS (JCR) Q1 12 Q2 8 Q3 7 Q4 5
TR Index 0 makale

Alan+yıl+tür normalize OpenAlex yüzdelik — Clarivate ESI / SciVal değildir.

Üst %1 makale 2
Üst %10 makale 8
Ort. yüzdelik 68.1%
Üst %1 payı 7.1%
Üst %10 payı 28.6%

Makaleler

YÖKSİS ve OpenAlex kaynak ayrımıyla makaleler; quartile ve TR Index ile daraltabilirsiniz.

Dizin filtreleri

Toplam 39 yayın

Scopus (SJR)
Q1 19 Q2 6 Q3 3 Q4 3
WoS (JCR)
Q1 12 Q2 8 Q3 7 Q4 5
TR Index
0 makale

Makale listesi

  1. 2026 Enhanced luminescence, photocatalytic and antibacterial performance of Ag+/Eu3+ co-doped MgO nanophosphors Ceramics International DOI 10.1016/j.ceramint.2025.12.387 YÖKSİS SJR Q1 JCR Q1 OpenAlex 34.8%
  2. 2023 Comparison of photoluminescence properties of Zn-and O-polar ZnO thin films JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS DOI https://joam.inoe.ro/volume/2023/25/9-10/September-October%202023/articles YÖKSİS SJR Q4 JCR Q4
  3. 2022 The temperature and excitation power density dependent photoluminescence study of Ga-doped ZnO thin films JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS DOI https://joam.inoe.ro/articles/the-temperature-and-excitation-power-density-dependent-photoluminescence-study-of-ga-doped-zno-thin-films/fulltext YÖKSİS SJR Q4 JCR Q4
  4. 2022 Morphological and optical characterizations of different ZnO nanostructures grown by mist-CVD Elsevier BV DOI 10.1016/j.jlumin.2022.119158 YÖKSİS SJR Q2 JCR Q2 OpenAlex 56.1%
  5. 2022 Predominant Scattering Mechanisms in Quaternary AlInGaN/GaN Heterostructures European Journal of Applied Physics DOI https://www.ej-physics.org/index.php/ejphysics/article/view/228/147 YÖKSİS
  6. 2020 Synthesis and optical characterization of bipod carbazole derivatives Walter de Gruyter GmbH DOI 10.1515/hc-2020-0111 YÖKSİS SJR Q4 JCR Q4 OpenAlex 57.0%
  7. 2020 Synthesis and characterization of well-dispersed amorphous LnBO3·3H2O (Ln: Dy, Tb) nanoparticles CHEMICAL PAPERS DOI 10.1007/s11696-020-01081-w YÖKSİS SJR Q2 JCR Q3 OpenAlex 0.6%
  8. 2018 Synthesis and optical characterization of novel carbazole Schiff bases JOURNAL OF MOLECULAR STRUCTURE DOI 10.1016/j.molstruc.2017.09.109 YÖKSİS SJR Q3 JCR Q3 OpenAlex 70.8%
  9. 2017 Transport properties of epitaxial graphene grown on SiC substrate Optoelectronics and Advanced Materials-Rapid Communications YÖKSİS SJR Q3 JCR Q4
  10. 2017 Synthesis, structural properties and characterisation of self activating Na2Zr(BO3)2 CHEMISTRY RESEARCH JOURNAL DOI https://chemrj.org/ YÖKSİS
  11. 2014 Temperature dependent hot electron transport in slightly lattice mismatched AlInN/AlN/GaN heterostructures JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS YÖKSİS SJR Q3 JCR Q4
  12. 2014 The effect of GaN thickness inserted between two AlN layers on the transport properties of a lattice matched AlInN AlN GaN AlN GaN double channel heterostructure Thin Solid Films DOI 10.1016/j.tsf.2013.11.114 YÖKSİS SJR Q1 JCR Q2 OpenAlex 72.2%
  13. 2013 Current Transport Mechanisms in the AlInN AlN GaN single channel and AlInN AlN GaN AlN GaN double channel heterostructures Thin Solid Films DOI 10.1016/j.tsf.2013.09.026 YÖKSİS SJR Q1 JCR Q2 OpenAlex 58.5%
  14. 2011 Energy relaxations of hot electrons in AlGaN AlN GaN heterostructures grown by MOCVD on sapphire and 6H SiC substrates The European Physical Journal Applied Physics DOI 10.1051/epjap/2011110218 YÖKSİS SJR Q2 JCR Q3 OpenAlex 72.0%
  15. 2010 Mobility limiting scattering mechanisms in nitride based two dimensional heterostructures with the InGaN channel Semiconductor Science and Technology DOI 10.1088/0268-1242/25/4/045024 YÖKSİS SJR Q1 JCR Q2 OpenAlex 76.1%
  16. 2010 Photoionization study of deep centers in GaN AlGaN multiple quantum wells Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures DOI 10.1116/1.3268613 YÖKSİS JCR Q2 OpenAlex 9.5%
  17. 2009 The electrical optical and structural properties of GaN epitaxial layers grown on Si 111 substrate with interlayers Superlattices and Microstructures DOI 10.1016/j.spmi.2009.09.009 YÖKSİS SJR Q1 JCR Q3 OpenAlex 76.3%
  18. 2009 Comparison of the transport properties of high quality AlGaN AlN GaN and AlInN AlN GaN two dimensional electron gas heterostructures Journal of Applied Physics DOI 10.1063/1.2996281 YÖKSİS SJR Q1 JCR Q1 OpenAlex üst %10 OpenAlex 97.9%
  19. 2009 The effect of AlN interlayer thicknesses on scattering processes in lattice matched AlInN GaN two dimensional electron gas heterostructures New Journal of Physics DOI 10.1088/1367-2630/11/6/063031 YÖKSİS SJR Q1 JCR Q1 OpenAlex üst %10 OpenAlex 95.4%
  20. 2008 Buffer optimization for crack free GaN epitaxial layers grown on Si 1 1 1 substrate by MOCVD Journal of Physics D: Applied Physics DOI 10.1088/0022-3727/41/15/155317 YÖKSİS SJR Q1 JCR Q2 OpenAlex üst %10 OpenAlex 96.5%

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