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Akademisyen

MUSTAFA SAĞLAM

PROFESÖR

ATATÜRK ÜNİVERSİTESİ FEN FAKÜLTESİ FİZİK BÖLÜMÜ

  • Ana Dal Fen Bilimleri ve Matematik Temel Alanı
  • Yan Dal Fizik

Kayıtlı çıktılara kısa bakış — ayrıntılar aşağıda.

  • Makale 171
  • Proje 0
  • Kitap 0
  • Bildiri 123
  • Patent 0
  • Sanatsal 0
Scopus (SJR) Q1 35 Q2 47 Q3 1 Q4 3
WoS (JCR) Q1 12 Q2 42 Q3 15 Q4 2
TR Index 2 makale

Alan+yıl+tür normalize OpenAlex yüzdelik — Clarivate ESI / SciVal değildir.

Üst %1 makale 0
Üst %10 makale 12
Ort. yüzdelik 63.9%
Üst %1 payı 0.0%
Üst %10 payı 13.6%

Makaleler

YÖKSİS ve OpenAlex kaynak ayrımıyla makaleler; quartile ve TR Index ile daraltabilirsiniz.

Dizin filtreleri

Toplam 171 yayın

Scopus (SJR)
Q1 35 Q2 47 Q3 1 Q4 3
WoS (JCR)
Q1 12 Q2 42 Q3 15 Q4 2
TR Index
2 makale

Makale listesi

  1. 2025 Study of how illumination affects the electrical properties of Al/n-gap Schottky diodes with varying amounts of Cu NCs-doped wm-cqd interlayer Physica B: Condensed Matter DOI 10.1016/j.physb.2025.417776 YÖKSİS SJR Q2 JCR Q2 OpenAlex üst %10 OpenAlex 90.6%
  2. 2024 Statistical analysis of characteristic parameters of graphene/p-Si junctions prepared under similar conditions PHYSICA B-CONDENSED MATTER DOI 10.1016/j.physb.2024.415738 YÖKSİS SJR Q2 JCR Q2 OpenAlex 66.9%
  3. 2024 Voltage-frequency dependence of the complex dielectric and electric modulus and the determination of the interface-state density distribution from the capacitance-frequency measurements of Al/p-Si/Al and Al/V2O5/p-Si/Al structures Applied Physics A DOI 10.1007/s00339-024-07758-3 YÖKSİS SJR Q2 JCR Q2 OpenAlex üst %10 OpenAlex 94.9%
  4. 2024 Statistical analysis of characteristic parameters of graphene/p-Si junctions prepared under similar conditions PHYSICA B-CONDENSED MATTER DOI 10.1016/j.physb.2024.415738 YÖKSİS SJR Q2 JCR Q2 OpenAlex 66.9%
  5. 2024 Voltage-frequency dependence of the complex dielectric and electric modulus and the determination of the interface-state density distribution from the capacitance-frequency measurements of Al/p-Si/Al and Al/V2O5/p-Si/Al structures APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING DOI 10.1007/s00339-024-07758-3 YÖKSİS SJR Q2 JCR Q2 OpenAlex üst %10 OpenAlex 94.9%
  6. 2022 Microstructural properties of SiC thin film deposited by RF sputtering technique and its role on the barrier parameters of n-InP/Pd and n-GaP/Pd junctions as an interlayer Elsevier BV DOI 10.1016/j.physb.2022.414364 YÖKSİS SJR Q2 JCR Q3 OpenAlex 68.5%
  7. 2022 Transfer of graphene thin film obtained by PECVD method to Au/p-Si rectifier junction as interfacial layer and analysis of its barrier characteristics depending on sample temperature Springer Science and Business Media LLC DOI 10.1007/s10854-022-08382-8 YÖKSİS SJR Q2 JCR Q2 OpenAlex 59.3%
  8. 2022 Microstructural properties of SiC thin film deposited by RF sputtering technique and its role on the barrier parameters of n-InP/Pd and n-GaP/Pd junctions as an interlayer Physica B: Condensed Matter DOI 10.1016/j.physb.2022.414364 YÖKSİS SJR Q2 JCR Q3 OpenAlex 68.5%
  9. 2022 Transfer of graphene thin film obtained by PECVD method to Au/p-Si rectifier junction as interfacial layer and analysis of its barrier characteristics depending on sample temperature Journal of Materials Science: Materials in Electronics DOI 10.1007/s10854-022-08382-8 YÖKSİS SJR Q2 JCR Q2 OpenAlex 59.3%
  10. 2021 Effects of aging on the electrical properties of Au/n-Si/Ti, Cu/n-Si/Ti and AuCu/n-Si/Ti Schottky diodes Materials Today: Proceedings DOI 10.1016/j.matpr.2021.03.270 YÖKSİS SJR Q2 OpenAlex 44.7%
  11. 2021 Role of Reduced Graphene Oxide-Gold Nanoparticle Composites on Au/Au-RGO/p-Si/Al Structure Depending on Sample Temperature Journal of Electronic Materials DOI 10.1007/s11664-021-09017-0 YÖKSİS SJR Q2 JCR Q3 OpenAlex 77.2%
  12. 2021 The effects of different doses of electron radiation on the electrical characteristics of ZnO interfacial Zn/n-Si junction Materials Today: Proceedings DOI 10.1016/j.matpr.2021.03.278 YÖKSİS SJR Q2 OpenAlex 5.2%
  13. 2021 Examination of characteristic parameters of Zn/n-Si junction depending on electron radiation applied at different doses Materials Today: Proceedings DOI 10.1016/j.matpr.2021.03.279 YÖKSİS SJR Q2 OpenAlex 5.6%
  14. 2021 Interpretation of the I-V, C-V and G/omega-V characteristics of the Au/ZnS/n-GaAs/In structure depending on annealing temperature PHYSICA B-CONDENSED MATTER DOI 10.1016/j.physb.2020.412801 YÖKSİS SJR Q2 JCR Q3 OpenAlex 61.3%
  15. 2021 Annealing effect on I-V and C-V characteristics of Al/n-InP Schottky diodes at low temperatures Materials Today: Proceedings DOI 10.1016/j.matpr.2021.03.275 YÖKSİS SJR Q2 OpenAlex 65.3%
  16. 2021 The temperature dependence of current-voltage characteristics of CuAuAg/n-Si/Ti Schottky diode Materials Today: Proceedings DOI 10.1016/j.matpr.2021.01.560 YÖKSİS SJR Q2 OpenAlex 51.2%
  17. 2021 Effects of aging on the electrical properties of Au/n-Si/Ti, Cu/n-Si/Ti and AuCu/n-Si/Ti Schottky diodes Materials Today: Proceedings DOI 10.1016/j.matpr.2021.03.270 YÖKSİS SJR Q2 OpenAlex 44.7%
  18. 2021 Examination of characteristic parameters of Zn/n-Si junction depending on electron radiation applied at different doses Materials Today: Proceedings DOI 10.1016/j.matpr.2021.03.279 YÖKSİS SJR Q2 OpenAlex 5.6%
  19. 2021 The effects of different doses of electron radiation on the electrical characteristics of ZnO interfacial Zn/n-Si junction Materials Today: Proceedings DOI 10.1016/j.matpr.2021.03.278 YÖKSİS SJR Q2 OpenAlex 5.2%
  20. 2020 Optimizing quality of lead-free perovskite thin film with anti-solventengineering and co-doping SnBr2/SnF2 its solar cell performance OPTICAL MATERIALS DOI 10.1016/j.optmat.2020.110524 YÖKSİS SJR Q1 JCR Q2 OpenAlex 80.4%

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