Akademisyen
ABDULKADİR SERTAP KAVASOĞLU
PROFESÖR
MUĞLA SITKI KOÇMAN ÜNİVERSİTESİ FEN FAKÜLTESİ FİZİK BÖLÜMÜ
- Ana Dal Fen Bilimleri ve Matematik Temel Alanı
- Yan Dal Fizik
Kayıtlı çıktılara kısa bakış — ayrıntılar aşağıda.
- Makale 30
- Proje 0
- Kitap 0
- Bildiri 0
- Patent 0
- Sanatsal 0
Scopus (SJR)
Q1
17
Q2
8
Q3
1
Q4
2
WoS (JCR)
Q1
10
Q2
11
Q3
6
Q4
1
TR Index
2
makale
Alan+yıl+tür normalize OpenAlex yüzdelik — Clarivate ESI / SciVal değildir.
Üst %1 makale
0
Üst %10 makale
1
Ort. yüzdelik
61.4%
Üst %1 payı
0.0%
Üst %10 payı
3.6%
Makaleler
YÖKSİS ve OpenAlex kaynak ayrımıyla makaleler; quartile ve TR Index ile daraltabilirsiniz.
Makale listesi
- 2020 Two Dimensional Modeling of Au/n-GaN Schottky Device YÖKSİS OpenAlex 7.7%
- 2023 AFORS-HET simulation for investigating the performance of ZnO/n-CdS/p-CdTe /Ag solar cell depending on CdTe acceptor concentration and temperature YÖKSİS SJR Q2 JCR Q2 OpenAlex 70.9%
- 2022 Işık Altında Elektrodepozisyon Yöntemi ile Üretilmiş GaxOyNz/p-Si Diyot Yapısının Elektriksel Karakterizasyonu YÖKSİS OpenAlex 9.4%
- 2016 A new simulation model for inhomogeneous Au/n-GaN structure YÖKSİS SJR Q3 JCR Q4 OpenAlex 3.4%
- 2015 A different approach to solar cell simulation YÖKSİS SJR Q1 JCR Q2 OpenAlex 71.3%
- 2013 Fabrication and electrical characterization of Al/diazo compound containing polyoxy chain/p-Si device structure YÖKSİS SJR Q2 JCR Q3 OpenAlex 51.8%
- 2012 The illustrated brief application of defect distribution model for heterojunction device by admittance spectroscopy YÖKSİS SJR Q1 JCR Q1 OpenAlex 62.8%
- 2012 Design and implementation of a low-cost multi-channel temperature measurement system for photovoltaic modules YÖKSİS SJR Q2 JCR Q2 OpenAlex 88.6%
- 2011 Electrical characterization of Au/Pd/n-GaN/Pd/Au device structure in the radio frequency range by simulation study YÖKSİS SJR Q1 JCR Q2 OpenAlex 58.8%
- 2011 Electrical characterization of a-Si:H(n)/c-Si(p) structure YÖKSİS SJR Q1 JCR Q1 OpenAlex 73.5%
- 2011 Intensity modulated short circuit current spectroscopy for solar cells YÖKSİS SJR Q1 JCR Q1 OpenAlex 46.0%
- 2010 Negative capacitance peculiarities in a-Si:H/c-Si rectifier structure YÖKSİS SJR Q1 JCR Q2 OpenAlex 70.8%
- 2010 The analysis of the charge transport mechanism of n-Si/MEH-PPV device structure using forward bias I–V–T characteristics YÖKSİS SJR Q1 JCR Q1 OpenAlex 89.4%
- 2010 I–V–T analysing an inhomogeneous Au/Poly(4-vinyl phenol)/p-Si structure with a double Gaussian distribution of barrier heights YÖKSİS SJR Q1 JCR Q1 OpenAlex 76.7%
- 2009 Investigation of temperature dependent dc current transport mechanism on Au/poly(4-vinyl phenol)/p-Si device YÖKSİS SJR Q1 JCR Q1 OpenAlex 69.1%
- 2009 A new method of diode ideality factor extraction from dark I–V curve YÖKSİS SJR Q2 JCR Q2 OpenAlex 77.5%
- 2009 Room-temperature interface state analysis of Au/Poly(4-vinyl phenol)/p-Si structure YÖKSİS SJR Q1 JCR Q1 OpenAlex 72.6%
- 2009 Observation of negative photoconductivity in (ZnO)x(CdO)1−x films YÖKSİS SJR Q2 JCR Q3 OpenAlex 60.8%
- 2009 Photocapacitance study at p–i–n photodiode by numerical C–V integration YÖKSİS SJR Q1 JCR Q2 OpenAlex 66.2%
- 2009 The circuit point of view of the temperature dependent open circuit voltage decay of the solar cell YÖKSİS SJR Q1 JCR Q2 OpenAlex 49.1%