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Akademisyen

ABDULKADİR SERTAP KAVASOĞLU

PROFESÖR

MUĞLA SITKI KOÇMAN ÜNİVERSİTESİ FEN FAKÜLTESİ FİZİK BÖLÜMÜ

  • Ana Dal Fen Bilimleri ve Matematik Temel Alanı
  • Yan Dal Fizik

Kayıtlı çıktılara kısa bakış — ayrıntılar aşağıda.

  • Makale 30
  • Proje 0
  • Kitap 0
  • Bildiri 0
  • Patent 0
  • Sanatsal 0
Scopus (SJR) Q1 17 Q2 8 Q3 1 Q4 2
WoS (JCR) Q1 10 Q2 11 Q3 6 Q4 1
TR Index 2 makale

Alan+yıl+tür normalize OpenAlex yüzdelik — Clarivate ESI / SciVal değildir.

Üst %1 makale 0
Üst %10 makale 1
Ort. yüzdelik 61.4%
Üst %1 payı 0.0%
Üst %10 payı 3.6%

Makaleler

YÖKSİS ve OpenAlex kaynak ayrımıyla makaleler; quartile ve TR Index ile daraltabilirsiniz.

Dizin filtreleri

Toplam 30 yayın

Makale listesi

  1. 2020 Two Dimensional Modeling of Au/n-GaN Schottky Device Journal of the Institute of Science and Technology DOI 10.21597/jist.691099 YÖKSİS OpenAlex 7.7%
  2. 2023 AFORS-HET simulation for investigating the performance of ZnO/n-CdS/p-CdTe /Ag solar cell depending on CdTe acceptor concentration and temperature Elsevier BV DOI 10.1016/j.physb.2022.414504 YÖKSİS SJR Q2 JCR Q2 OpenAlex 70.9%
  3. 2022 Işık Altında Elektrodepozisyon Yöntemi ile Üretilmiş GaxOyNz/p-Si Diyot Yapısının Elektriksel Karakterizasyonu Igdir University DOI 10.21597/jist.1115556 YÖKSİS OpenAlex 9.4%
  4. 2016 A new simulation model for inhomogeneous Au/n-GaN structure Pleiades Publishing Ltd DOI 10.1134/S1063782616050134 YÖKSİS SJR Q3 JCR Q4 OpenAlex 3.4%
  5. 2015 A different approach to solar cell simulation Elsevier BV DOI 10.1016/j.materresbull.2015.06.007 YÖKSİS SJR Q1 JCR Q2 OpenAlex 71.3%
  6. 2013 Fabrication and electrical characterization of Al/diazo compound containing polyoxy chain/p-Si device structure Elsevier BV DOI 10.1016/j.physb.2012.11.030 YÖKSİS SJR Q2 JCR Q3 OpenAlex 51.8%
  7. 2012 The illustrated brief application of defect distribution model for heterojunction device by admittance spectroscopy Elsevier BV DOI 10.1016/j.jallcom.2012.01.154 YÖKSİS SJR Q1 JCR Q1 OpenAlex 62.8%
  8. 2012 Design and implementation of a low-cost multi-channel temperature measurement system for photovoltaic modules Elsevier BV DOI 10.1016/j.measurement.2012.02.029 YÖKSİS SJR Q2 JCR Q2 OpenAlex 88.6%
  9. 2011 Electrical characterization of Au/Pd/n-GaN/Pd/Au device structure in the radio frequency range by simulation study Elsevier BV DOI 10.1016/j.synthmet.2011.05.018 YÖKSİS SJR Q1 JCR Q2 OpenAlex 58.8%
  10. 2011 Electrical characterization of a-Si:H(n)/c-Si(p) structure Elsevier BV DOI 10.1016/j.jallcom.2011.07.044 YÖKSİS SJR Q1 JCR Q1 OpenAlex 73.5%
  11. 2011 Intensity modulated short circuit current spectroscopy for solar cells Elsevier BV DOI 10.1016/j.solmat.2010.10.012 YÖKSİS SJR Q1 JCR Q1 OpenAlex 46.0%
  12. 2010 Negative capacitance peculiarities in a-Si:H/c-Si rectifier structure Elsevier BV DOI 10.1016/j.mee.2009.06.001 YÖKSİS SJR Q1 JCR Q2 OpenAlex 70.8%
  13. 2010 The analysis of the charge transport mechanism of n-Si/MEH-PPV device structure using forward bias I–V–T characteristics Elsevier BV DOI 10.1016/j.jallcom.2009.11.128 YÖKSİS SJR Q1 JCR Q1 OpenAlex 89.4%
  14. 2010 I–V–T analysing an inhomogeneous Au/Poly(4-vinyl phenol)/p-Si structure with a double Gaussian distribution of barrier heights Springer Science and Business Media LLC DOI 10.1007/s10971-010-2384-5 YÖKSİS SJR Q1 JCR Q1 OpenAlex 76.7%
  15. 2009 Investigation of temperature dependent dc current transport mechanism on Au/poly(4-vinyl phenol)/p-Si device IOP Publishing DOI 10.1088/0022-3727/42/14/145111 YÖKSİS SJR Q1 JCR Q1 OpenAlex 69.1%
  16. 2009 A new method of diode ideality factor extraction from dark I–V curve Elsevier BV DOI 10.1016/j.cap.2008.08.002 YÖKSİS SJR Q2 JCR Q2 OpenAlex 77.5%
  17. 2009 Room-temperature interface state analysis of Au/Poly(4-vinyl phenol)/p-Si structure Elsevier BV DOI 10.1016/j.synthmet.2009.06.015 YÖKSİS SJR Q1 JCR Q1 OpenAlex 72.6%
  18. 2009 Observation of negative photoconductivity in (ZnO)x(CdO)1−x films Elsevier BV DOI 10.1016/j.jpcs.2008.11.018 YÖKSİS SJR Q2 JCR Q3 OpenAlex 60.8%
  19. 2009 Photocapacitance study at p–i–n photodiode by numerical C–V integration Elsevier BV DOI 10.1016/j.sse.2008.11.012 YÖKSİS SJR Q1 JCR Q2 OpenAlex 66.2%
  20. 2009 The circuit point of view of the temperature dependent open circuit voltage decay of the solar cell Elsevier BV DOI 10.1016/j.solener.2009.03.009 YÖKSİS SJR Q1 JCR Q2 OpenAlex 49.1%

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