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Akademisyen

SEZAİ ASUBAY

PROFESÖR

DİCLE ÜNİVERSİTESİ FEN FAKÜLTESİ FİZİK BÖLÜMÜ

  • Ana Dal Fen Bilimleri ve Matematik Temel Alanı
  • Yan Dal Fizik

Kayıtlı çıktılara kısa bakış — ayrıntılar aşağıda.

  • Makale 30
  • Proje 0
  • Kitap 14
  • Bildiri 28
  • Patent 0
  • Sanatsal 0
Scopus (SJR) Q1 2 Q2 7 Q3 5 Q4 2
WoS (JCR) Q1 1 Q2 2 Q3 6 Q4 6
TR Index 0 makale

Alan+yıl+tür normalize OpenAlex yüzdelik — Clarivate ESI / SciVal değildir.

Üst %1 makale 0
Üst %10 makale 0
Ort. yüzdelik 53.3%
Üst %1 payı 0.0%
Üst %10 payı 0.0%

Makaleler

YÖKSİS ve OpenAlex kaynak ayrımıyla makaleler; quartile ve TR Index ile daraltabilirsiniz.

Dizin filtreleri

Toplam 30 yayın

Scopus (SJR)
Q1 2 Q2 7 Q3 5 Q4 2
WoS (JCR)
Q1 1 Q2 2 Q3 6 Q4 6
TR Index
0 makale

Makale listesi

  1. 2023 Deposition and Characterization of Si Substituted Cu2ZnSnS4 Thin Films Silicon DOI 10.1007/s12633-022-02018-6 YÖKSİS SJR Q2 JCR Q3 OpenAlex 58.7%
  2. 2022 Production of PbO thin film using Silar method and electronıc and interface properties of Pb/PbO/p-Si MIS contacts Journal of Ovonic Research DOI 10.15251/JOR.2022.181.44 YÖKSİS SJR Q3 JCR Q4 OpenAlex 58.3%
  3. 2022 Morphological and electrical properties of Ag/p-type indium phosphide MIS structures with malachite green organic dyes Journal of Ovonic Research DOI 10.15251/JOR.2022.183.421 YÖKSİS SJR Q3 JCR Q4 OpenAlex 5.4%
  4. 2021 The influence of Ge substitution and H2S annealing on Cu2ZnSnS4 thin films OPTICAL MATERIALS DOI 10.1016/j.optmat.2021.111565 YÖKSİS SJR Q2 JCR Q2 OpenAlex 57.0%
  5. 2017 Temperature dependent electrical characterization of RF sputtered MoS2/n-Si heterojunction OPTIK DOI 10.1016/j.ijleo.2017.06.037 YÖKSİS SJR Q2 JCR Q3 OpenAlex 70.2%
  6. 2016 Influence of Temperature And Light Intensity on Ru II Complex Based Organic Inorganic Device Ameraican Institute of Physics: Conference Proceedings DOI 10.1063/1.4944304 YÖKSİS OpenAlex 2.6%
  7. 2010 Electrical properties of safranine T p Si organic inorganic semiconductor devices The European Physical Journal Applied Physics DOI 10.1051/epjap/2010022 YÖKSİS SJR Q2 JCR Q3 OpenAlex 62.1%
  8. 2010 Electrical characterization of the Al/new fuchsin/n-Si organic-modified device PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES DOI 10.1016/j.physe.2009.11.079 YÖKSİS SJR Q2 JCR Q3 OpenAlex 85.3%
  9. 2009 Determination of Proton Relaxivities of Mn II Cu II and Cr III added to Solutions of Serum Proteins Molecules DOI 10.3390/molecules14041537 YÖKSİS SJR Q2 JCR Q3 OpenAlex 49.5%
  10. 2008 Determination of the laterally homogeneous barrier height of thermally annealed and unannealed Au p InP Zn Au Schottky barrier diodes Applied Surface Science DOI 10.1016/j.apsusc.2007.11.050 YÖKSİS SJR Q1 JCR Q1 OpenAlex 86.8%
  11. 2008 Electrical characterization of organic on inorganic semiconductor Schottky structures Journal of Physics: Condensed Matter DOI 10.1088/0953-8984/20/04/045215 YÖKSİS SJR Q1 JCR Q2 OpenAlex 88.3%
  12. 2022 Production of PbO thin film using Silar method and electronıc and interface properties of Pb/PbO/p-Si MIS contacts Virtual Company of Physics DOI 10.15251/JOR.2022.181.44 YÖKSİS SJR Q3 JCR Q4 OpenAlex 58.3%
  13. 2022 Deposition and Characterization of Si Substituted Cu2ZnSnS4 Thin Films Springer Science and Business Media LLC DOI 10.1007/s12633-022-02018-6 YÖKSİS SJR Q2 JCR Q3 OpenAlex 58.7%
  14. 2022 Morphological and electrical properties of Ag/p-type indium phosphide MIS structures with malachite green organic dyes Virtual Company of Physics DOI 10.15251/JOR.2022.183.421 YÖKSİS SJR Q3 JCR Q4 OpenAlex 5.4%
  15. 2020 A useful model to interpret the experimental I-V-T and C-V-T data of spatially inhomogeneous metal-semiconductor rectifying contacts Australian Journal of Electrical and Electronics Engineering YÖKSİS SJR Q4
  16. 2018 REACTIVELY SPUTTERED MoO3 THIN FILMS AND TEMPERATURE DEPENDENCE OF ELECTRICAL PROPERTIES OFAN Ag/MoO3/n-Si DIODE Journal of Ovonic Research YÖKSİS SJR Q3 JCR Q4
  17. 2017 THE CHARACTERISTIC DIODE PARAMETERS INTi/p-InP CONTACTS PREPARED BY DC SPUTTERINGAND EVAPORATION PROCESSES OVER A WIDEMEASUREMENT TEMPERATURE SURFACE REVIEW AND LETTERS YÖKSİS SJR Q4 JCR Q4
  18. 2014 Fabrication and electrical properties of an organic inorganic device based on Coumarin 30 dye Materials Science in Semiconductor YÖKSİS
  19. 2014 electrical parameters of a DC sputtered Mo n type 6H SiC Schottky barrier diode materials science in semiconductor YÖKSİS
  20. 2011 The electrical characteristics of Al p InP Schottky contacts Microelectronic Engineering YÖKSİS

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