Academician profile · DOÇENT
ÖZGÜR KELEKÇİ
- Ana Dal Fen Bilimleri ve Matematik Temel Alanı
- Yan Dal Fizik
- MÜHENDİSLİK FAKÜLTESİ
- ELEKTRİK-ELEKTRONİK MÜHENDİSLİĞİ BÖLÜMÜ
Scopus (SJR)
Q1
13
Q2
5
Q3
2
Q4
0
WoS (JCR)
Q1
9
Q2
7
Q3
2
Q4
2
TR Index
1
articles
Articles
- 2025 Algebra structure of conformal Killing–Yano forms in geometries with skew-symmetric torsion
- 2024 A physical classification of Killing magnetic fields in Thurston geometries
- 2024 Kähler Magnetic Curves in Conformally Euclidean Schwarzschild Space
- 2023 On Kahler structures of Taub-Nut and Kerr spaces
- 2023 Classification of Killing magnetic curves in ℍ3
- 2020 Locally conformally flat metrics on surfaces of general type
- 2018 Classical Yang-Baxter equation from supergravity
- 2016 Large superconformal near-horizons from M-theory
- 2015 Supersymmetry and non-Abelian T-duality in type II supergravity
- 2014 Enhanced intervalley scattering in artificially stacked double-layer graphene
- 2013 Inhomogeneity-Induced Carrier Transport of Chemical Vapor Deposited Graphene on HfO2 at Low Temperatures
- 2013 Carrier Density and Electric Field Dependent Nonlinear Transport of Chemical Vapor Deposition Graphene
- 2013 The structural and electrical evolution of chemical vapor deposition grown graphene by electron beam irradiation induced disorder
- 2013 Anomalous Nernst Effects of [CoSiB/Pt] Multilayer Films
- 2013 An alternative IIB embedding of F(4) gauged supergravity
- 2012 Investigation of AlInN HEMT structures with different AlGaN buffer layers grown on sapphire substrates by MOCVD
- 2012 Electron transport properties in Al0.25Ga0.75N/AlN/GaN heterostructures with different InGaN back barrier layers and GaN channel thicknesses grown by MOCVD
- 2011 Effect of growth pressure on coalescence thickness and crystal quality of GaN deposited on 4H–SiC
- 2011 Numerical optimization of In-mole fractions and layer thicknesses in AlxGa1-xN/AlN/GaN high electron mobility transistors with InGaN back barriers
- 2010 Improvement of breakdown characteristics in AlGaN/GaN/AlxGa1-xN HEMT based on a grading AlxGa1-xN buffer layer