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Akademisyen

AHMET FARUK ÖZDEMİR

PROFESÖR

SÜLEYMAN DEMİREL ÜNİVERSİTESİ MÜHENDİSLİK VE DOĞA BİLİMLERİ FAKÜLTESİ FİZİK BÖLÜMÜ

  • Ana Dal Fen Bilimleri ve Matematik Temel Alanı
  • Yan Dal Fizik

Kayıtlı çıktılara kısa bakış — ayrıntılar aşağıda.

  • Makale 47
  • Proje 0
  • Kitap 0
  • Bildiri 0
  • Patent 0
  • Sanatsal 0
Scopus (SJR) Q1 14 Q2 13 Q3 10 Q4 3
WoS (JCR) Q1 6 Q2 15 Q3 10 Q4 8
TR Index 1 makale

Alan+yıl+tür normalize OpenAlex yüzdelik — Clarivate ESI / SciVal değildir.

Üst %1 makale 0
Üst %10 makale 0
Ort. yüzdelik 11.2%
Üst %1 payı 0.0%
Üst %10 payı 0.0%

Makaleler

YÖKSİS ve OpenAlex kaynak ayrımıyla makaleler; quartile ve TR Index ile daraltabilirsiniz.

Dizin filtreleri

Toplam 47 yayın

Scopus (SJR)
Q1 14 Q2 13 Q3 10 Q4 3
WoS (JCR)
Q1 6 Q2 15 Q3 10 Q4 8
TR Index
1 makale

Makale listesi

  1. 2026 A comparison of the effects of different light intensities on the current-voltage characteristics of the Si3N4 interface with various thicknesses grown on the (Au: Ti)/n-GaAs (MS) structure OPTICAL MATERIALS DOI 10.1016/j.optmat.2025.117800 YÖKSİS SJR Q1 JCR Q2
  2. 2025 Detailed analysis of possible current-transport mechanisms (CTMs) in Au/(P3DMTFT)/n-GaAs Schottky diodes (SDs) in a wide range of temperature PHYSICA B-CONDENSED MATTER DOI 10.1016/j.physb.2025.416949 YÖKSİS SJR Q2 JCR Q2
  3. 2025 Welding of Exotic Materials Aspects in Mining & Mineral Science DOI 10.31031/AMMS.2025.14.000844 YÖKSİS
  4. 2024 Investigation of dielectric and electric modulus properties of Al/p-Si structures with pure, 3%, and 5% (graphene:PVA) by impedance spectroscopy JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS DOI 10.1007/s10854-024-12077-7 YÖKSİS SJR Q2 JCR Q2
  5. 2024 Tensile properties and microstructure of AISI 430 ferritic stainless steel welded TIG method International Journal of Computational and Experimental Science and Engineering DOI 10.22399/ijcesen.699 YÖKSİS
  6. 2022 Discrepancies in barrier heights obtained from current–voltage (IV) and capacitance–voltage (CV) of Au/PNoMPhPPy/n-GaAs structures in wide range of temperature JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS DOI 10.1007/s10854-022-08181-1 YÖKSİS SJR Q2 JCR Q2
  7. 2021 Effects of measurement temperature and metal thickness on Schottky diode characteristics Physica B: Condensed Matter DOI 10.1016/j.physb.2021.413125 YÖKSİS SJR Q2 JCR Q3
  8. 2021 The reverse bias current-voltage-temperature (I-V-T) characteristics of the (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs) in temperature range of 80-380 K Journal of Materials Science: Materials in Electronics DOI 10.1007/s10854-021-05284-z YÖKSİS SJR Q2 JCR Q2
  9. 2021 The response of high barrier Schottky diodes to light illumination Journal of Materials Science: Materials in Electronics DOI 10.1007/s10854-020-05186-6 YÖKSİS SJR Q2 JCR Q2
  10. 2020 The origin of anomalous peak and negative capacitance on dielectric behavior in the accumulation region in Au/(0.07 Zn-doped polyvinyl alcohol)/n-4H–SiC metal-polymer-semiconductor structures/diodes studied by temperature-dependent impedance measurements Journal of Physics and Chemistry of Solids DOI https://linkinghub.elsevier.com/retrieve/pii/S0022369719323157 YÖKSİS SJR Q2 JCR Q2
  11. 2020 The evaluation of the current–voltage and capacitance–voltage-frequency measurements of Yb/p-Si Schottky diodes with a high zero-bias barrier height Applied Physics A DOI http://link.springer.com/10.1007/s00339-020-03662-8 YÖKSİS SJR Q2 JCR Q2
  12. 2020 The interfacial properties of Au/n-4H-SiC structure with (Zn-doped PVA) interfacial layer PHYSICA SCRIPTA DOI https://iopscience.iop.org/article/10.1088/1402-4896/abc03a YÖKSİS SJR Q2 JCR Q2
  13. 2020 Doğal Oksit Arayüzey Tabakalı Zr/p-Si Schottky Diyotlarının YüksekFrekanslarda Kapasite-Gerilim ve İletkenlik-Gerilim Karakteristiklerinin Analizi Bitlis Eren Üniversitesi Fen Bilimleri Dergisi YÖKSİS
  14. 2019 Effect of illumination on electrical parameters of Au/(P3DMTFT)/n-GaAs Schottky barrier diodes INDIAN JOURNAL OF PHYSICS DOI 10.1007/s12648-019-01644-y YÖKSİS SJR Q3 JCR Q3
  15. 2019 Investigation of Dielectric Properties, Electric Modulus and Conductivity of the Au/Zn-Doped PVA/n-4H-SiC (MPS) Structure Using Impedance Spectroscopy Method Zeitschrift für Physikalische Chemie DOI 10.1515/zpch-2017-1091 YÖKSİS SJR Q3 JCR Q3
  16. 2019 Investigation of temperature dependent negative capacitance in the forward bias C-V characteristics of (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs) Materials Science in Semiconductor Processing DOI 10.1016/j.mssp.2018.08.019 YÖKSİS SJR Q1 JCR Q2
  17. 2019 Investigation of Electrical Characteristics of Yb/p-Si Schottky Diodes Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi DOI 10.21597/jist.537844 YÖKSİS
  18. 2019 Mo/n-Si Schottky Diyotların Akım-Voltaj ve Kapasite-Voltaj Karakteristiklerinin Analizi Düzce Üniversitesi Bilim ve Teknoloji Dergisi DOI 10.29130/dubited.544197 YÖKSİS TR Index
  19. 2018 The Effects of Thermal Neutron Irradiation on Current-Voltage and Capacitance-Voltage Characteristics of Au/n-Si/Ag Schottky Barrier Diodes Silicon DOI 10.1007/s12633-018-0054-3 YÖKSİS SJR Q3 JCR Q4
  20. 2018 A comparative study on dielectric behaviours of Au/(Zn-doped PVA)/n-4H-SiC (MPS) structures with different interlayer thicknesses using impedance spectroscopy methods BULLETIN OF MATERIALS SCIENCE YÖKSİS SJR Q3 JCR Q4

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