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OpenAlex konusu

Advancements in Semiconductor Devices and Circuit Design

Bu sayfa OpenAlex konu etiketine göre çalışmaları ve o konuda görünen akademisyenleri listeler. YÖKSİS temel alan / yan dal değildir.

OpenAlex 1.213 eser 60 yazar konusu

Çalışmalar

1.213 eser

  1. FinFET-based high-frequency quadrature oscillator design and its TRNG applications 2026

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  2. A low-voltage and low power FinFET based full-wave rectifier 2026

    This paper presents a low-voltage, low-power current-mode full-wave rectifier designed entirely with Fin Field Effect Transistors (FinFETs), without the use of resistors, diodes, or additional active elements. This makes the design highly suitable for integration in modern integrated circuits. FinFET technology, with…

  3. Prediction of Indium Fraction Effect on Electrical Behavior of 90 nm InxGa1-xAs MOSFETs Using BSIM4 2026

    In this present paper, the electrical behavior of MOSFET transistors in InxGa1-xAs semiconductor materials designed on 90 nm technology has been predicted using the BSIM4 model, by studying the effect of indium fraction x on the output and transfer characteristics, on-resistance (Ron), saturation current (Isat), thres…

  4. Layout optimization and physical verification of complex quantum-dot cellular automata circuits for high-performance computing 2026

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  5. Correction: High-performance and low-power quantum-dot-based multiply–accumulate design for next-generation supercomputing platforms 2026

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  6. High‐Performance and Energy‐Efficient Sub‐5 nm 2D Double‐Gate MOSFETs Based on Silicon Arsenide Monolayers (Adv. Electron. Mater. 5/2026) 2026

    Double-Gate MOSFETs The cover art illustrates sub-5 nm double-gate metal-oxide-semiconductor field-effect transistors utilizing 2D silicon arsenide monolayers as channel materials. These transistors exhibit superior performance and energy efficiency, meeting the ITRS 2028 requirements. The study highlights the potenti…

  7. Introductory Chapter: Field-Effect Transistors – Shaping the Digital Future 2026

    materials beyond silicon, including wide-bandgap semiconductors such as gallium nitride (GaN) [10] and silicon carbide (SiC) [11], as well as graphene [12] and other high-mobility materials, to overcome the physical and thermal limitations.Beyond faster and smaller logic devices, FET research is also expanding into ne…

  8. Warm starting Gaussian processes for efficient electrical characterization of semiconductors 2026

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  9. Carriers transport mechanisms in p-GaN gate impacting on dynamic V TH and their novel characterization and distinction 2026

    Abstract Through a novel pulsed I – V test with an extra pre-state at sub-millisecond timescales, the effects of positive charge storage and depletion in the gate stack on the dynamic threshold voltage ( V TH ) instability are characterized and studied in a p-GaN gated enhancement-mode high electron mobility transisto…

  10. Impact of quantum confinement effects on monolayer MoS 2 channel FinFETs 2026

    Abstract This study presents a semiclassical quantum-correction framework utilizing the density-gradient (DG) method within a drift-diffusion formalism (DD) to model electrostatics in ultra-thin MoS 2 transistors. The device performance is captured under gate-length (L G ) scaling and thickness-dependent quantum confi…

  11. Optimization of Semiconductor Monitoring via Residual-Based Computational and Statistical Methods 2026

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  12. Chirality-Dependent Cutoff Frequency and I-V Characteristics in Graphene Nanoribbon-Based FETs 2026

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Akademisyenler

60 akademisyen