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Article detail · 2012

An Ultra Low Power Dual Band IR UWB Transmitter in 130 nm CMOS

IEEE Transactions on Circuits and Systems II: Express Briefs

YÖKSİS OpenAlex ISSN 1549-7747 DOI 10.1109/TCSII.2012.2218474 Citations 30 SJR Q1 JCR Q2

10.1109/TCSII.2012.2218474

YÖKSİS YÖKSİS article record

OpenAlex OpenAlex enrichment (abstract, citations, topics)

Abstract

OpenAlex record

English (OpenAlex)

In this brief, a 0-960-MHz/3.1-5-GHz dual-band ultra low-power impulse-radio ultrawideband transmitter is presented. The pulse transmitter integrated circuit is fabricated using a 130-nm CMOS process with the core die area of 0.1 mm2. At 1-MHz pulse repetition frequency, the power consumption values are measured in the lower and the upper bands as 5.6 and 31 μW, respectively. The lower and the upper band “off-time” power consumptions of the transmitter are 0.36 and 1.7 μW, respectively. The dc-to-radio-frequency conversion efficiencies are 11.1% in the lower band and 4.8% in the upper band.

Topics

  • Radio Frequency Integrated Circuit Design
  • Ultra-Wideband Communications Technology
  • Microwave Engineering and Waveguides

Type: article Radio Frequency Integrated Circuit Design

Index information

WoS (JCR) and Scopus (SJR) quartiles by ISSN and publication year. · 2012

Scopus (SJR) / WoS (JCR)

IEEE Transactions on Circuits and Systems II: Express Briefs

Scopus (SJR) Q1 0,731 Year 2012
WoS (JCR) Q2 JIF 1,3 Year 2012

Journal page

Universities

  • BOĞAZİÇİ ÜNİVERSİTESİ

Authors

  1. Batur Okan Zafer
  2. Akdag Evren
  3. Akkurt Halit Kürşat
  4. AHMET ÖNCÜ BOĞAZİÇİ ÜNİVERSİTESİ
  5. Koca Mutlu
  6. Günhan Dündar