Makale detayı · 2016
A comparative photoluminescence study on Mn Free GaAs AlAs and Mn containing Ga1 xMnxAs AlAs quantum wells QWs grown on variousorientations by MBE
- Yıl
- 2016
- ISSN
1478-6435- Tür
- article
Veri kaynağı ayrımı
- YÖKSİS YÖKSİS makale kaydı
- OpenAlex OpenAlex zenginleştirmesi (özet, atıf, konular)
Özet
İngilizce (OpenAlex)
Optical properties of diluted magnetic semiconductor Ga0.999Mn0.001As/AlAs quantum well structures grown on (1 0 0 ), (1 1 0), (3 1 1)B and (4 1 1)B by molecular beam epitaxy are reported. Temperature-dependent spectral photoluminescence (PL) measurement was performed at temperatures between 15 and 300 K. The PL measurements showed that band gap of the alloy decreases with increasing lattice temperature regardless the growth orientations. S-shaped temperature dependence has been observed in the samples grown on (1 0 0), (3 1 1)B, (4 1 1)B orientations. PL emission energy is fitted with Varshni and Bose–Einstein Approximation to determine Debye temperature (β), (ΘE) and thermal expansion coefficient (α), the exciton–phonon coupling strength (aB).
Konular
- ZnO doping and properties
- Semiconductor Quantum Structures and Devices
- Electronic and Structural Properties of Oxides
Birincil konu ZnO doping and properties